Modeling and experimental analysis of RPCVD based nitride film growth

C. Martin*, K. S A Butcher, M. Wintrebert-Fouquet, A. Fernandes, T. Dabbs, P. P T Chen, R. Carmen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

9 Citations (Scopus)

Abstract

The growth of group-III nitride compound films using the Remote Plasma Chemical Vapour Deposition (RPCVD) process is investigated. The scalability of the technology to larger deposition areas will be discussed. In addition, the key advantages of the RPCVD process for GaN over more conventional deposition methods (such as MOCVD), which are realized through a lower growth temperature, compatibility with glass substrates, in addition to silicon and sapphire, and the complete elimination of toxic NH3 from the growth process will be presented. These advantages will be discussed via analysis of X-Ray diffraction, Scanning Electron Microscopy (SEM) and Optical Transmission Spectroscopy characterization methods of samples grown using the RPCVD process. In addition, subsequent downstream device processing of double heterojunction devices grown on glass and sapphire substrates will be discussed.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices III
Place of PublicationBellingham, WA
PublisherSPIE
Pages1-5
Number of pages5
Volume6894
ISBN (Print)9780819470690
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventSociety of Photo-Optical Instrumentation Engineers (SPIE) - San Jose, CA, United States
Duration: 21 Jan 200824 Jan 2008

Other

OtherSociety of Photo-Optical Instrumentation Engineers (SPIE)
CountryUnited States
CitySan Jose, CA
Period21/01/0824/01/08

Keywords

  • Gallium nitride
  • Metal organic chemical vapour deposition
  • Photoluminescence
  • Remote plasma chemical vapour deposition
  • Scanning electron microscopy
  • X-ray pole figures

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