Abstract
The growth of group-III nitride compound films using the Remote Plasma Chemical Vapour Deposition (RPCVD) process is investigated. The scalability of the technology to larger deposition areas will be discussed. In addition, the key advantages of the RPCVD process for GaN over more conventional deposition methods (such as MOCVD), which are realized through a lower growth temperature, compatibility with glass substrates, in addition to silicon and sapphire, and the complete elimination of toxic NH3 from the growth process will be presented. These advantages will be discussed via analysis of X-Ray diffraction, Scanning Electron Microscopy (SEM) and Optical Transmission Spectroscopy characterization methods of samples grown using the RPCVD process. In addition, subsequent downstream device processing of double heterojunction devices grown on glass and sapphire substrates will be discussed.
Original language | English |
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Title of host publication | Gallium Nitride Materials and Devices III |
Place of Publication | Bellingham, WA |
Publisher | SPIE |
Pages | 1-5 |
Number of pages | 5 |
Volume | 6894 |
ISBN (Print) | 9780819470690 |
DOIs | |
Publication status | Published - 2008 |
Externally published | Yes |
Event | Society of Photo-Optical Instrumentation Engineers (SPIE) - San Jose, CA, United States Duration: 21 Jan 2008 → 24 Jan 2008 |
Other
Other | Society of Photo-Optical Instrumentation Engineers (SPIE) |
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Country/Territory | United States |
City | San Jose, CA |
Period | 21/01/08 → 24/01/08 |
Keywords
- Gallium nitride
- Metal organic chemical vapour deposition
- Photoluminescence
- Remote plasma chemical vapour deposition
- Scanning electron microscopy
- X-ray pole figures