TY - JOUR
T1 - Modeling and simulation methodology for SOA-aware circuit design in DC and pulsed-mode operation of HV MOSFETs
AU - Khandelwal, Sourabh
AU - Sharma, Surya
AU - Chauhan, Yogesh Singh
AU - Gneiting, Thomas
AU - Fjeldly, Tor A.
PY - 2013
Y1 - 2013
N2 - In this paper, we present a modeling and simulation methodology for safe-operating-area (SOA)-aware circuit design in dc and pulsed-mode operation of high-voltage MOSFETs (HV MOSFETs). The developed methodology gives an accurate description of the SOA of devices under dc and, more importantly, transient inputs, taking into account the width and duty-cycle of the pulse. To the best of the authors' knowledge, this is the first time such a methodology integrated with circuit design tools is presented. It is shown through simulation of standard circuits of HV MOSFETs that the proposed methodology avoids overdesigns and enables circuit designers to use the high-voltage technology to its full potential.
AB - In this paper, we present a modeling and simulation methodology for safe-operating-area (SOA)-aware circuit design in dc and pulsed-mode operation of high-voltage MOSFETs (HV MOSFETs). The developed methodology gives an accurate description of the SOA of devices under dc and, more importantly, transient inputs, taking into account the width and duty-cycle of the pulse. To the best of the authors' knowledge, this is the first time such a methodology integrated with circuit design tools is presented. It is shown through simulation of standard circuits of HV MOSFETs that the proposed methodology avoids overdesigns and enables circuit designers to use the high-voltage technology to its full potential.
KW - High-voltage MOSFETs (HV MOSFETs)
KW - pulsed mode
KW - safe operating area (SOA)
UR - http://www.scopus.com/inward/record.url?scp=84872845633&partnerID=8YFLogxK
U2 - 10.1109/TED.2012.2218112
DO - 10.1109/TED.2012.2218112
M3 - Article
AN - SCOPUS:84872845633
SN - 0018-9383
VL - 60
SP - 714
EP - 718
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 2
M1 - 6327648
ER -