Modeling and simulation methodology for SOA-aware circuit design in DC and pulsed-mode operation of HV MOSFETs

Sourabh Khandelwal*, Surya Sharma, Yogesh Singh Chauhan, Thomas Gneiting, Tor A. Fjeldly

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper, we present a modeling and simulation methodology for safe-operating-area (SOA)-aware circuit design in dc and pulsed-mode operation of high-voltage MOSFETs (HV MOSFETs). The developed methodology gives an accurate description of the SOA of devices under dc and, more importantly, transient inputs, taking into account the width and duty-cycle of the pulse. To the best of the authors' knowledge, this is the first time such a methodology integrated with circuit design tools is presented. It is shown through simulation of standard circuits of HV MOSFETs that the proposed methodology avoids overdesigns and enables circuit designers to use the high-voltage technology to its full potential.

Original languageEnglish
Article number6327648
Pages (from-to)714-718
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume60
Issue number2
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • High-voltage MOSFETs (HV MOSFETs)
  • pulsed mode
  • safe operating area (SOA)

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