Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model

A. Dasgupta, S. Ghosh, S. A. Ahsan, Y. S. Chauhan, S. Khandelwal, N. Defrance

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

3 Citations (Scopus)

Abstract

In this paper, we aim to present a surface potential based model for GaN High Electron Mobility Transistors. The analytical model is computationally efficient and can be accurately used for DC and RF predictions. It includes various effects of velocity saturation, access region resistance, temperature, gate current and noise.

Original languageEnglish
Title of host publication2016 IEEE MTTS International Microwave and RF Conference (IMaRC)
Subtitle of host publicationproceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Electronic)9781509046850
ISBN (Print)9781509046867
DOIs
Publication statusPublished - 2016
Externally publishedYes
Event2016 IEEE MTTS International Microwave and RF Conference, IMaRC 2016 - Aerocity, New Delhi, India
Duration: 5 Dec 20169 Dec 2016

Conference

Conference2016 IEEE MTTS International Microwave and RF Conference, IMaRC 2016
CountryIndia
CityAerocity, New Delhi
Period5/12/169/12/16

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