Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model

A. Dasgupta; S. Ghosh; S. A. Ahsan; Y. S. Chauhan; S. Khandelwal; N. Defrance

doi:10.1109/IMaRC.2016.7939612

Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model

A. Dasgupta, S. Ghosh, S. A. Ahsan, Y. S. Chauhan, S. Khandelwal, N. Defrance

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

In this paper, we aim to present a surface potential based model for GaN High Electron Mobility Transistors. The analytical model is computationally efficient and can be accurately used for DC and RF predictions. It includes various effects of velocity saturation, access region resistance, temperature, gate current and noise.

Original language	English
Title of host publication	2016 IEEE MTTS International Microwave and RF Conference (IMaRC)
Subtitle of host publication	proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	4
ISBN (Electronic)	9781509046850
ISBN (Print)	9781509046867
DOIs	https://doi.org/10.1109/IMaRC.2016.7939612
Publication status	Published - 2016
Externally published	Yes
Event	2016 IEEE MTTS International Microwave and RF Conference, IMaRC 2016 - Aerocity, New Delhi, India Duration: 5 Dec 2016 → 9 Dec 2016

Conference

Conference	2016 IEEE MTTS International Microwave and RF Conference, IMaRC 2016
Country/Territory	India
City	Aerocity, New Delhi
Period	5/12/16 → 9/12/16

Access to Document

10.1109/IMaRC.2016.7939612

Cite this

@inproceedings{9fdffeca7fcd4c5e8050affb98149157,

title = "Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model",

abstract = "In this paper, we aim to present a surface potential based model for GaN High Electron Mobility Transistors. The analytical model is computationally efficient and can be accurately used for DC and RF predictions. It includes various effects of velocity saturation, access region resistance, temperature, gate current and noise.",

author = "A. Dasgupta and S. Ghosh and Ahsan, {S. A.} and Chauhan, {Y. S.} and S. Khandelwal and N. Defrance",

year = "2016",

doi = "10.1109/IMaRC.2016.7939612",

language = "English",

isbn = "9781509046867",

booktitle = "2016 IEEE MTTS International Microwave and RF Conference (IMaRC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2016 IEEE MTTS International Microwave and RF Conference, IMaRC 2016 ; Conference date: 05-12-2016 Through 09-12-2016",

}

Dasgupta, A, Ghosh, S, Ahsan, SA, Chauhan, YS, Khandelwal, S & Defrance, N 2016, Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model. in 2016 IEEE MTTS International Microwave and RF Conference (IMaRC): proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, 2016 IEEE MTTS International Microwave and RF Conference, IMaRC 2016, Aerocity, New Delhi, India, 5/12/16. https://doi.org/10.1109/IMaRC.2016.7939612

Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model. / Dasgupta, A.; Ghosh, S.; Ahsan, S. A. et al.
2016 IEEE MTTS International Microwave and RF Conference (IMaRC): proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2016.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model

AU - Dasgupta, A.

AU - Ghosh, S.

AU - Ahsan, S. A.

AU - Chauhan, Y. S.

AU - Khandelwal, S.

AU - Defrance, N.

PY - 2016

Y1 - 2016

N2 - In this paper, we aim to present a surface potential based model for GaN High Electron Mobility Transistors. The analytical model is computationally efficient and can be accurately used for DC and RF predictions. It includes various effects of velocity saturation, access region resistance, temperature, gate current and noise.

AB - In this paper, we aim to present a surface potential based model for GaN High Electron Mobility Transistors. The analytical model is computationally efficient and can be accurately used for DC and RF predictions. It includes various effects of velocity saturation, access region resistance, temperature, gate current and noise.

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U2 - 10.1109/IMaRC.2016.7939612

DO - 10.1109/IMaRC.2016.7939612

M3 - Conference proceeding contribution

AN - SCOPUS:85021432150

SN - 9781509046867

BT - 2016 IEEE MTTS International Microwave and RF Conference (IMaRC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2016 IEEE MTTS International Microwave and RF Conference, IMaRC 2016

Y2 - 5 December 2016 through 9 December 2016

ER -

Modeling DC, RF and noise behavior of GaN HEMTs using ASM-HEMT compact model

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