Modeling, design and performance of InP/InGaAs double-heterojunction bipolar transistors

Mark Parrilla, David Newson, David Skellern, Myles D. A. MacBean

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Original language	English
Title of host publication	Fourth International Conference on Indium Phosphide and Related Materials
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	414-417
Number of pages	4
ISBN (Print)	0780305221
DOIs	https://doi.org/10.1109/ICIPRM.1992.235576
Publication status	Published - 1992
Event	4th International Conference on Indium Phosphide and Related Materials - NEWPORT Duration: 21 Apr 1992 → 24 Apr 1992

Conference	4th International Conference on Indium Phosphide and Related Materials
City	NEWPORT
Period	21/04/92 → 24/04/92

Access to Document

@inproceedings{ebd3ea12dac242e4b33c1ee8f32affbe,

title = "Modeling, design and performance of InP/InGaAs double-heterojunction bipolar transistors",

author = "Mark Parrilla and David Newson and David Skellern and MacBean, {Myles D. A.}",

year = "1992",

doi = "10.1109/ICIPRM.1992.235576",

language = "English",

isbn = "0780305221",

pages = "414--417",

booktitle = "Fourth International Conference on Indium Phosphide and Related Materials",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "4th International Conference on Indium Phosphide and Related Materials ; Conference date: 21-04-1992 Through 24-04-1992",

}

Parrilla, M, Newson, D, Skellern, D & MacBean, MDA 1992, Modeling, design and performance of InP/InGaAs double-heterojunction bipolar transistors. in Fourth International Conference on Indium Phosphide and Related Materials. Institute of Electrical and Electronics Engineers (IEEE), pp. 414-417, 4th International Conference on Indium Phosphide and Related Materials, NEWPORT, 21/04/92. https://doi.org/10.1109/ICIPRM.1992.235576

Modeling, design and performance of InP/InGaAs double-heterojunction bipolar transistors. / Parrilla, Mark; Newson, David; Skellern, David et al.
Fourth International Conference on Indium Phosphide and Related Materials. Institute of Electrical and Electronics Engineers (IEEE), 1992. p. 414-417.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Modeling, design and performance of InP/InGaAs double-heterojunction bipolar transistors

AU - Parrilla, Mark

AU - Newson, David

AU - Skellern, David

AU - MacBean, Myles D. A.

PY - 1992

Y1 - 1992

U2 - 10.1109/ICIPRM.1992.235576

DO - 10.1109/ICIPRM.1992.235576

M3 - Conference proceeding contribution

SN - 0780305221

SP - 414

EP - 417

BT - Fourth International Conference on Indium Phosphide and Related Materials

PB - Institute of Electrical and Electronics Engineers (IEEE)

T2 - 4th International Conference on Indium Phosphide and Related Materials

Y2 - 21 April 1992 through 24 April 1992

ER -