Modeling HEMT intermodulation distortion characteristics

G. Qu*, A. E. Parker

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    The significance of the nonlinearity of HEMT capacitance models to the prediction of intermodulation is investigated. Three capacitance models, one linear and two with contrasting nonlinear behavior, are shown to exhibit almost identical performance. It is concluded that the nonlinearity of the low-frequency model is the dominant distortion generating component. Development of capacitance models with accurate high-order derivatives is unwarranted without an accurate dc model. Therefore, careful characterization of the drain current description is most important for the successful circuit simulation.

    Original languageEnglish
    Pages (from-to)493-496
    Number of pages4
    JournalMicroelectronics Journal
    Volume31
    Issue number7
    DOIs
    Publication statusPublished - 30 Jul 2000

    Keywords

    • high electron mobility transistors
    • intermodulation distortion
    • nonlinear capacitance models
    • HEMT

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