@inproceedings{240c5c2012544664ab3b8fc52626bbf8,
title = "Modeling HEMT intermodulation distortion characteristics",
abstract = "The significance of the nonlinearity of HEMT capacitance models to the prediction of intermodulation is investigated. Three capacitance models, one linear and two with contrasting nonlinear behavior, are shown to exhibited almost identical performance. It is concluded that the nonlinearity of the low-frequency model is the dominant distortion generating component. Development of capacitance models with accurate high-order derivatives is unwarranted without an accurate dc model. Therefore, careful characterization of the drain current description is most important for successful circuit simulation.",
keywords = "high electron mobility transistors, intermodulation distortion, nonlinear capacitance models, HEMT",
author = "Guoli Qu and Parker, {Anthony E.}",
year = "1999",
month = oct,
day = "8",
doi = "10.1117/12.368448",
language = "English",
isbn = "9780819434944",
volume = "3893",
series = "Proceedings of SPIE",
publisher = "SPIE",
pages = "396--402",
editor = "Bernard Courtois and Demidenko, {Serge N.}",
booktitle = "Design, Characterization, and Packaging for MEMS and Microelectronics",
address = "United States",
}