Modeling independent multi-gate MOSFETs

This work presents the industry standard compact BSIM-IMG, a fully-featured turn-key compact model for independent multi-gate MOSFETs. The two independent (front- and back-gate) control of the channel charge in these devices enables novel applications wherein back-gate can be in depletion or inversion, and BSIM-IMG accurately models these scenarios. Modeling of the channel-charge in this device requires a consistent solution of coupled Poisson's equations at the front and the back-gate. This papers presents an analytical solution which is numerically robust and passes important quality tests for an industry grade compact model. To represent real device effects, several extra models are incorporated such as drain-induced barrier lowering, velocity saturation, short-channel effects, self-heating effect, mobility-field dependence, substrate-depletion effect, etc.