Abstract
This work presents the industry standard compact BSIM-IMG, a fully-featured turn-key compact model for independent multi-gate MOSFETs. The two independent (front- and back-gate) control of the channel charge in these devices enables novel applications wherein back-gate can be in depletion or inversion, and BSIM-IMG accurately models these scenarios. Modeling of the channel-charge in this device requires a consistent solution of coupled Poisson's equations at the front and the back-gate. This papers presents an analytical solution which is numerically robust and passes important quality tests for an industry grade compact model. To represent real device effects, several extra models are incorporated such as drain-induced barrier lowering, velocity saturation, short-channel effects, self-heating effect, mobility-field dependence, substrate-depletion effect, etc.
Original language | English |
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Title of host publication | TechConnect Briefs 2016 |
Subtitle of host publication | Advanced Manufacturing, Electronics and Microsystems |
Editors | Matthew Laudon, Bart Romanowicz |
Place of Publication | Austin, TX |
Publisher | TechConnect |
Pages | 281-286 |
Number of pages | 6 |
Volume | 4 |
ISBN (Electronic) | 9780997511734 |
Publication status | Published - 2016 |
Externally published | Yes |
Event | 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States Duration: 22 May 2016 → 25 May 2016 |
Other
Other | 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference |
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Country/Territory | United States |
City | Washington |
Period | 22/05/16 → 25/05/16 |
Keywords
- BSIM
- Compact model
- Multi-gate MOSFETs