Modeling low frequency noise in PDSOI MOSFETs for analog and RF applications

S. Sirohi*, S. Khandelwal

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

In this paper we present the modeling of low frequency in 0.18um PDSOI technology. The two main noise sources, 1/f and excess noise due to shot noise have been discussed. It has been shown that accurate modeling of the body voltage, impact ionization, diode currents and 1/f noise characteristics is essential to incorporate the correct bias and frequency dependence of this excess noise component. Model to hardware correlation for body-contacted and floating body device is also shown to match well with the industry standard BSIMSOI 4.3 model.

Original languageEnglish
Title of host publicationICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1940-1942
Number of pages3
ISBN (Print)9781424457984
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 1 Nov 20104 Nov 2010

Other

Other2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period1/11/104/11/10

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