Modeling low frequency noise in PDSOI MOSFETs for analog and RF applications

S. Sirohi; S. Khandelwal

doi:10.1109/ICSICT.2010.5667804

Modeling low frequency noise in PDSOI MOSFETs for analog and RF applications

S. Sirohi^*, S. Khandelwal

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

In this paper we present the modeling of low frequency in 0.18um PDSOI technology. The two main noise sources, 1/f and excess noise due to shot noise have been discussed. It has been shown that accurate modeling of the body voltage, impact ionization, diode currents and 1/f noise characteristics is essential to incorporate the correct bias and frequency dependence of this excess noise component. Model to hardware correlation for body-contacted and floating body device is also shown to match well with the industry standard BSIMSOI 4.3 model.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1940-1942
Number of pages	3
ISBN (Print)	9781424457984
DOIs	https://doi.org/10.1109/ICSICT.2010.5667804
Publication status	Published - 2010
Externally published	Yes
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 1 Nov 2010 → 4 Nov 2010

Other

Other	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	1/11/10 → 4/11/10

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10.1109/ICSICT.2010.5667804

Cite this

@inproceedings{c1cce30a741341b7b05fda7778295706,

title = "Modeling low frequency noise in PDSOI MOSFETs for analog and RF applications",

abstract = "In this paper we present the modeling of low frequency in 0.18um PDSOI technology. The two main noise sources, 1/f and excess noise due to shot noise have been discussed. It has been shown that accurate modeling of the body voltage, impact ionization, diode currents and 1/f noise characteristics is essential to incorporate the correct bias and frequency dependence of this excess noise component. Model to hardware correlation for body-contacted and floating body device is also shown to match well with the industry standard BSIMSOI 4.3 model.",

author = "S. Sirohi and S. Khandelwal",

year = "2010",

doi = "10.1109/ICSICT.2010.5667804",

language = "English",

isbn = "9781424457984",

pages = "1940--1942",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

}

Sirohi, S & Khandelwal, S 2010, Modeling low frequency noise in PDSOI MOSFETs for analog and RF applications. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667804, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1940-1942, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 1/11/10. https://doi.org/10.1109/ICSICT.2010.5667804

Modeling low frequency noise in PDSOI MOSFETs for analog and RF applications. / Sirohi, S.; Khandelwal, S.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 1940-1942 5667804.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Sirohi, S.

AU - Khandelwal, S.

PY - 2010

Y1 - 2010

N2 - In this paper we present the modeling of low frequency in 0.18um PDSOI technology. The two main noise sources, 1/f and excess noise due to shot noise have been discussed. It has been shown that accurate modeling of the body voltage, impact ionization, diode currents and 1/f noise characteristics is essential to incorporate the correct bias and frequency dependence of this excess noise component. Model to hardware correlation for body-contacted and floating body device is also shown to match well with the industry standard BSIMSOI 4.3 model.

AB - In this paper we present the modeling of low frequency in 0.18um PDSOI technology. The two main noise sources, 1/f and excess noise due to shot noise have been discussed. It has been shown that accurate modeling of the body voltage, impact ionization, diode currents and 1/f noise characteristics is essential to incorporate the correct bias and frequency dependence of this excess noise component. Model to hardware correlation for body-contacted and floating body device is also shown to match well with the industry standard BSIMSOI 4.3 model.

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DO - 10.1109/ICSICT.2010.5667804

M3 - Conference proceeding contribution

AN - SCOPUS:78751559067

SN - 9781424457984

SP - 1940

EP - 1942

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

Y2 - 1 November 2010 through 4 November 2010

ER -

Modeling low frequency noise in PDSOI MOSFETs for analog and RF applications

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