Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs

Mohit D. Ganeriwala; Chandan Yadav; Nihar R. Mohapatra; Sourabh Khandelwal; Chenming Hu; Yogesh Singh Chauhan

doi:10.1109/JEDS.2016.2586116

Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs

Mohit D. Ganeriwala, Chandan Yadav, Nihar R. Mohapatra, Sourabh Khandelwal, Chenming Hu, Yogesh Singh Chauhan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed for their circuit simulation. The model presented in this paper addresses this need and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation. The proposed model is verified against the numerical solution of coupled Schrödinger-Poisson equation for FinFET with various channel thickness and effective mass.

Original language	English
Article number	7526302
Pages (from-to)	396-401
Number of pages	6
Journal	IEEE Journal of the Electron Devices Society
Volume	4
Issue number	6
DOIs	https://doi.org/10.1109/JEDS.2016.2586116
Publication status	Published - 1 Nov 2016
Externally published	Yes

Keywords

density of states (DOS)
FinFET
III-V
quantum capacitance
SPICE

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10.1109/JEDS.2016.2586116

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title = "Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs",

abstract = "In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed for their circuit simulation. The model presented in this paper addresses this need and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation. The proposed model is verified against the numerical solution of coupled Schr{\"o}dinger-Poisson equation for FinFET with various channel thickness and effective mass.",

keywords = "density of states (DOS), FinFET, III-V, quantum capacitance, SPICE",

author = "Ganeriwala, {Mohit D.} and Chandan Yadav and Mohapatra, {Nihar R.} and Sourabh Khandelwal and Chenming Hu and Chauhan, {Yogesh Singh}",

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AU - Ganeriwala, Mohit D.

AU - Yadav, Chandan

AU - Mohapatra, Nihar R.

AU - Khandelwal, Sourabh

AU - Hu, Chenming

AU - Chauhan, Yogesh Singh

PY - 2016/11/1

Y1 - 2016/11/1

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AB - In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed for their circuit simulation. The model presented in this paper addresses this need and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation. The proposed model is verified against the numerical solution of coupled Schrödinger-Poisson equation for FinFET with various channel thickness and effective mass.

KW - density of states (DOS)

KW - FinFET

KW - III-V

KW - quantum capacitance

KW - SPICE

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JF - IEEE Journal of the Electron Devices Society

IS - 6

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ER -

Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs

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Keywords

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