In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed for their circuit simulation. The model presented in this paper addresses this need and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation. The proposed model is verified against the numerical solution of coupled Schrödinger-Poisson equation for FinFET with various channel thickness and effective mass.
|Number of pages||6|
|Journal||IEEE Journal of the Electron Devices Society|
|Publication status||Published - 1 Nov 2016|
- density of states (DOS)
- quantum capacitance