Modeling of Charge and Quantum Capacitance in Low Effective Mass III-V FinFETs

Mohit D. Ganeriwala, Chandan Yadav, Nihar R. Mohapatra, Sourabh Khandelwal, Chenming Hu, Yogesh Singh Chauhan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


In this paper, we present a compact model for semiconductor charge and quantum capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate for future technology node, a compact model is needed for their circuit simulation. The model presented in this paper addresses this need and is completely explicit and computationally efficient which makes it highly suitable for SPICE implementation. The proposed model is verified against the numerical solution of coupled Schrödinger-Poisson equation for FinFET with various channel thickness and effective mass.

Original languageEnglish
Article number7526302
Pages (from-to)396-401
Number of pages6
JournalIEEE Journal of the Electron Devices Society
Issue number6
Publication statusPublished - 1 Nov 2016
Externally publishedYes


  • density of states (DOS)
  • FinFET
  • III-V
  • quantum capacitance


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