Modeling of GaN-based normally-off FinFET

Chandan Yadav, Pragya Kushwaha, Sourabh Khandelwal, Juan Pablo Duarte, Yogesh Singh Chauhan, Chenming Hu

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear dependence on fin-width. The proposed model captures both 2-DEG and sidewall channel conduction as well as the fin-width dependency on device characteristics. Model shows excellent agreement with state-of-the-art experimental data.

Original languageEnglish
Article number6786354
Pages (from-to)612-614
Number of pages3
JournalIEEE Electron Device Letters
Issue number6
Publication statusPublished - Jun 2014
Externally publishedYes


  • 2-DEG
  • AlGaN/GaN
  • compact model
  • III-V FinFET
  • tri-gate


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