Modeling of GaN-based normally-off FinFET

Chandan Yadav; Pragya Kushwaha; Sourabh Khandelwal; Juan Pablo Duarte; Yogesh Singh Chauhan; Chenming Hu

doi:10.1109/LED.2014.2314700

Modeling of GaN-based normally-off FinFET

Chandan Yadav, Pragya Kushwaha, Sourabh Khandelwal, Juan Pablo Duarte, Yogesh Singh Chauhan, Chenming Hu

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear dependence on fin-width. The proposed model captures both 2-DEG and sidewall channel conduction as well as the fin-width dependency on device characteristics. Model shows excellent agreement with state-of-the-art experimental data.

Original language	English
Article number	6786354
Pages (from-to)	612-614
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	6
DOIs	https://doi.org/10.1109/LED.2014.2314700
Publication status	Published - Jun 2014
Externally published	Yes

Keywords

2-DEG
AlGaN/GaN
compact model
III-V FinFET
tri-gate

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10.1109/LED.2014.2314700

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title = "Modeling of GaN-based normally-off FinFET",

abstract = "In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear dependence on fin-width. The proposed model captures both 2-DEG and sidewall channel conduction as well as the fin-width dependency on device characteristics. Model shows excellent agreement with state-of-the-art experimental data.",

keywords = "2-DEG, AlGaN/GaN, compact model, III-V FinFET, tri-gate",

author = "Chandan Yadav and Pragya Kushwaha and Sourabh Khandelwal and Duarte, {Juan Pablo} and Chauhan, {Yogesh Singh} and Chenming Hu",

year = "2014",

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AU - Kushwaha, Pragya

AU - Khandelwal, Sourabh

AU - Duarte, Juan Pablo

AU - Chauhan, Yogesh Singh

AU - Hu, Chenming

PY - 2014/6

Y1 - 2014/6

N2 - In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear dependence on fin-width. The proposed model captures both 2-DEG and sidewall channel conduction as well as the fin-width dependency on device characteristics. Model shows excellent agreement with state-of-the-art experimental data.

AB - In this letter, a macromodel for normally-off (enhancement mode) AlGaN/GaN-based FinFET (2-DEG channel at top with two MOS like sidewall channels) is proposed. AlGaN/GaN-based FinFET devices have improved gate control on the channel due to additional sidewall gates compared with planar structures, but device characteristics exhibit strong nonlinear dependence on fin-width. The proposed model captures both 2-DEG and sidewall channel conduction as well as the fin-width dependency on device characteristics. Model shows excellent agreement with state-of-the-art experimental data.

KW - 2-DEG

KW - AlGaN/GaN

KW - compact model

KW - III-V FinFET

KW - tri-gate

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DO - 10.1109/LED.2014.2314700

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EP - 614

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Modeling of GaN-based normally-off FinFET

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Keywords

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