Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model

Harshit Agarwal; Pragya Kushwaha; Yogesh S. Chauhan; Sourabh Khandelwal; Juan P. Duarte; Yen Kai Lin; Huan Lin Chang; Chenming Hu; Heng Wu; Peide D. Ye

doi:10.1109/EDSSC.2016.7785303

Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model

Harshit Agarwal, Pragya Kushwaha, Yogesh S. Chauhan, Sourabh Khandelwal, Juan P. Duarte, Yen Kai Lin, Huan Lin Chang, Chenming Hu, Heng Wu, Peide D. Ye

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

7 Citations (Scopus)

Abstract

Recently, experimental Germanium CMOS devices and circuit are reported for advanced technology nodes for the first time. In this paper, we have modeled Germanium On Insulator (GeOI) device with industry standard compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model. It is shown that BSIM-IMG with updated mobility model accurately captures static characteristics for both n-channel and p-channel devices, and reproduces experimental CMOS inverter characteristics. This is the first time, when a compact model is validated on experimental CMOS circuit operation of GeOI.

Original language	English
Title of host publication	EDSSC 2016
Subtitle of host publication	IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	444-447
Number of pages	4
ISBN (Electronic)	9781509018307
DOIs	https://doi.org/10.1109/EDSSC.2016.7785303
Publication status	Published - 15 Dec 2016
Externally published	Yes
Event	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016

Other

Other	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Country/Territory	Hong Kong
City	Hong Kong
Period	3/08/16 → 5/08/16

Keywords

BSIM-IMG
Compact Model
Germanium CMOS
Germanium on Insulator

Access to Document

10.1109/EDSSC.2016.7785303

Cite this

Agarwal, H., Kushwaha, P., Chauhan, Y. S., Khandelwal, S., Duarte, J. P., Lin, Y. K., Chang, H. L., Hu, C., Wu, H., & Ye, P. D. (2016). Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model. In EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings (pp. 444-447). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EDSSC.2016.7785303

@inproceedings{0499e3a4dea5446e9f4b906c68254655,

title = "Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model",

abstract = "Recently, experimental Germanium CMOS devices and circuit are reported for advanced technology nodes for the first time. In this paper, we have modeled Germanium On Insulator (GeOI) device with industry standard compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model. It is shown that BSIM-IMG with updated mobility model accurately captures static characteristics for both n-channel and p-channel devices, and reproduces experimental CMOS inverter characteristics. This is the first time, when a compact model is validated on experimental CMOS circuit operation of GeOI.",

keywords = "BSIM-IMG, Compact Model, Germanium CMOS, Germanium on Insulator",

author = "Harshit Agarwal and Pragya Kushwaha and Chauhan, {Yogesh S.} and Sourabh Khandelwal and Duarte, {Juan P.} and Lin, {Yen Kai} and Chang, {Huan Lin} and Chenming Hu and Heng Wu and Ye, {Peide D.}",

year = "2016",

month = dec,

day = "15",

doi = "10.1109/EDSSC.2016.7785303",

language = "English",

pages = "444--447",

booktitle = "EDSSC 2016",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 ; Conference date: 03-08-2016 Through 05-08-2016",

}

Agarwal, H, Kushwaha, P, Chauhan, YS, Khandelwal, S, Duarte, JP, Lin, YK, Chang, HL, Hu, C, Wu, H & Ye, PD 2016, Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model. in EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 444-447, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, Hong Kong, 3/08/16. https://doi.org/10.1109/EDSSC.2016.7785303

Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model. / Agarwal, Harshit; Kushwaha, Pragya; Chauhan, Yogesh S. et al.
EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 444-447.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model

AU - Agarwal, Harshit

AU - Kushwaha, Pragya

AU - Chauhan, Yogesh S.

AU - Khandelwal, Sourabh

AU - Duarte, Juan P.

AU - Lin, Yen Kai

AU - Chang, Huan Lin

AU - Hu, Chenming

AU - Wu, Heng

AU - Ye, Peide D.

PY - 2016/12/15

Y1 - 2016/12/15

N2 - Recently, experimental Germanium CMOS devices and circuit are reported for advanced technology nodes for the first time. In this paper, we have modeled Germanium On Insulator (GeOI) device with industry standard compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model. It is shown that BSIM-IMG with updated mobility model accurately captures static characteristics for both n-channel and p-channel devices, and reproduces experimental CMOS inverter characteristics. This is the first time, when a compact model is validated on experimental CMOS circuit operation of GeOI.

AB - Recently, experimental Germanium CMOS devices and circuit are reported for advanced technology nodes for the first time. In this paper, we have modeled Germanium On Insulator (GeOI) device with industry standard compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model. It is shown that BSIM-IMG with updated mobility model accurately captures static characteristics for both n-channel and p-channel devices, and reproduces experimental CMOS inverter characteristics. This is the first time, when a compact model is validated on experimental CMOS circuit operation of GeOI.

KW - BSIM-IMG

KW - Compact Model

KW - Germanium CMOS

KW - Germanium on Insulator

UR - http://www.scopus.com/inward/record.url?scp=85010280268&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2016.7785303

DO - 10.1109/EDSSC.2016.7785303

M3 - Conference proceeding contribution

AN - SCOPUS:85010280268

SP - 444

EP - 447

BT - EDSSC 2016

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

Y2 - 3 August 2016 through 5 August 2016

ER -

Agarwal H, Kushwaha P, Chauhan YS, Khandelwal S, Duarte JP, Lin YK et al. Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model. In EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 444-447 doi: 10.1109/EDSSC.2016.7785303

Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model

Abstract

Other

Keywords

Access to Document

Other files and links

Fingerprint

Cite this