Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model

Harshit Agarwal, Pragya Kushwaha, Yogesh S. Chauhan, Sourabh Khandelwal, Juan P. Duarte, Yen Kai Lin, Huan Lin Chang, Chenming Hu, Heng Wu, Peide D. Ye

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

5 Citations (Scopus)

Abstract

Recently, experimental Germanium CMOS devices and circuit are reported for advanced technology nodes for the first time. In this paper, we have modeled Germanium On Insulator (GeOI) device with industry standard compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model. It is shown that BSIM-IMG with updated mobility model accurately captures static characteristics for both n-channel and p-channel devices, and reproduces experimental CMOS inverter characteristics. This is the first time, when a compact model is validated on experimental CMOS circuit operation of GeOI.

Original languageEnglish
Title of host publicationEDSSC 2016
Subtitle of host publicationIEEE International Conference on Electron Devices and Solid-State Circuits : proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages444-447
Number of pages4
ISBN (Electronic)9781509018307
DOIs
Publication statusPublished - 15 Dec 2016
Externally publishedYes
Event2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong
Duration: 3 Aug 20165 Aug 2016

Other

Other2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
CountryHong Kong
CityHong Kong
Period3/08/165/08/16

Keywords

  • BSIM-IMG
  • Compact Model
  • Germanium CMOS
  • Germanium on Insulator

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