Modeling of high frequency noise in SOI MOSFETs

Muthubalan Varadharajaperumal; Sourabh Khandelwal; Saurabh Sirohi; Ethirajan Tamilmani; Vaidyanathan Subramanian

doi:10.1109/VLSI.Design.2010.82

Modeling of high frequency noise in SOI MOSFETs

Muthubalan Varadharajaperumal^*, Sourabh Khandelwal, Saurabh Sirohi, Ethirajan Tamilmani, Vaidyanathan Subramanian

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

3 Citations (Scopus)

Abstract

The high frequency thermal noise sets the lower limit of the detectable signals in the receiver RF front-end systems. Hence it is very important that the models for thermal noise should be more accurate and physical. In this paper, we model thermal noise with BSIMSOI and PSPSOI models and compare it with the hardware data. The comparison is done for two types of FET:thick gate-oxide NFET(5.2 nm) and thin gate-oxide NFET(3.2 nm). The hardware correlation between the PSPSOI and BSIMSOI models are compared and the PSPSOI model is found to model the hardware data more accurately. The noise performance between the thin oxide and thick oxide NFETs are compared and the thin oxide FET has been found to have a better noise performance.

Original language	English
Title of host publication	VLSi Design 2010 - 23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems
Place of Publication	Los Alamitos, Calif.
Pages	212-217
Number of pages	6
DOIs	https://doi.org/10.1109/VLSI.Design.2010.82
Publication status	Published - 2010
Externally published	Yes
Event	23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems, VLSi Design 2010 - Bangalore, India Duration: 3 Jan 2010 → 7 Jan 2010

Other

Other	23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems, VLSi Design 2010
Country/Territory	India
City	Bangalore
Period	3/01/10 → 7/01/10

Access to Document

10.1109/VLSI.Design.2010.82

Cite this

@inproceedings{3bce46c459be493ca3fceacc83e6cdd0,

title = "Modeling of high frequency noise in SOI MOSFETs",

abstract = "The high frequency thermal noise sets the lower limit of the detectable signals in the receiver RF front-end systems. Hence it is very important that the models for thermal noise should be more accurate and physical. In this paper, we model thermal noise with BSIMSOI and PSPSOI models and compare it with the hardware data. The comparison is done for two types of FET:thick gate-oxide NFET(5.2 nm) and thin gate-oxide NFET(3.2 nm). The hardware correlation between the PSPSOI and BSIMSOI models are compared and the PSPSOI model is found to model the hardware data more accurately. The noise performance between the thin oxide and thick oxide NFETs are compared and the thin oxide FET has been found to have a better noise performance.",

author = "Muthubalan Varadharajaperumal and Sourabh Khandelwal and Saurabh Sirohi and Ethirajan Tamilmani and Vaidyanathan Subramanian",

year = "2010",

doi = "10.1109/VLSI.Design.2010.82",

language = "English",

isbn = "9780769539287",

pages = "212--217",

booktitle = "VLSi Design 2010 - 23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems",

note = "23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems, VLSi Design 2010 ; Conference date: 03-01-2010 Through 07-01-2010",

}

Varadharajaperumal, M, Khandelwal, S, Sirohi, S, Tamilmani, E & Subramanian, V 2010, Modeling of high frequency noise in SOI MOSFETs. in VLSi Design 2010 - 23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems., 5401193, Los Alamitos, Calif., pp. 212-217, 23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems, VLSi Design 2010, Bangalore, India, 3/01/10. https://doi.org/10.1109/VLSI.Design.2010.82

Modeling of high frequency noise in SOI MOSFETs. / Varadharajaperumal, Muthubalan; Khandelwal, Sourabh; Sirohi, Saurabh et al.

VLSi Design 2010 - 23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems. Los Alamitos, Calif., 2010. p. 212-217 5401193.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Modeling of high frequency noise in SOI MOSFETs

AU - Varadharajaperumal, Muthubalan

AU - Khandelwal, Sourabh

AU - Sirohi, Saurabh

AU - Tamilmani, Ethirajan

AU - Subramanian, Vaidyanathan

PY - 2010

Y1 - 2010

N2 - The high frequency thermal noise sets the lower limit of the detectable signals in the receiver RF front-end systems. Hence it is very important that the models for thermal noise should be more accurate and physical. In this paper, we model thermal noise with BSIMSOI and PSPSOI models and compare it with the hardware data. The comparison is done for two types of FET:thick gate-oxide NFET(5.2 nm) and thin gate-oxide NFET(3.2 nm). The hardware correlation between the PSPSOI and BSIMSOI models are compared and the PSPSOI model is found to model the hardware data more accurately. The noise performance between the thin oxide and thick oxide NFETs are compared and the thin oxide FET has been found to have a better noise performance.

AB - The high frequency thermal noise sets the lower limit of the detectable signals in the receiver RF front-end systems. Hence it is very important that the models for thermal noise should be more accurate and physical. In this paper, we model thermal noise with BSIMSOI and PSPSOI models and compare it with the hardware data. The comparison is done for two types of FET:thick gate-oxide NFET(5.2 nm) and thin gate-oxide NFET(3.2 nm). The hardware correlation between the PSPSOI and BSIMSOI models are compared and the PSPSOI model is found to model the hardware data more accurately. The noise performance between the thin oxide and thick oxide NFETs are compared and the thin oxide FET has been found to have a better noise performance.

UR - http://www.scopus.com/inward/record.url?scp=77950005163&partnerID=8YFLogxK

U2 - 10.1109/VLSI.Design.2010.82

DO - 10.1109/VLSI.Design.2010.82

M3 - Conference proceeding contribution

AN - SCOPUS:77950005163

SN - 9780769539287

SP - 212

EP - 217

BT - VLSi Design 2010 - 23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems

CY - Los Alamitos, Calif.

T2 - 23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems, VLSi Design 2010

Y2 - 3 January 2010 through 7 January 2010

ER -

Modeling of high frequency noise in SOI MOSFETs

Abstract

Other

Access to Document

Other files and links

Fingerprint

Cite this