Modeling of high frequency noise in SOI MOSFETs

Muthubalan Varadharajaperumal*, Sourabh Khandelwal, Saurabh Sirohi, Ethirajan Tamilmani, Vaidyanathan Subramanian

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

3 Citations (Scopus)

Abstract

The high frequency thermal noise sets the lower limit of the detectable signals in the receiver RF front-end systems. Hence it is very important that the models for thermal noise should be more accurate and physical. In this paper, we model thermal noise with BSIMSOI and PSPSOI models and compare it with the hardware data. The comparison is done for two types of FET:thick gate-oxide NFET(5.2 nm) and thin gate-oxide NFET(3.2 nm). The hardware correlation between the PSPSOI and BSIMSOI models are compared and the PSPSOI model is found to model the hardware data more accurately. The noise performance between the thin oxide and thick oxide NFETs are compared and the thin oxide FET has been found to have a better noise performance.

Original languageEnglish
Title of host publicationVLSi Design 2010 - 23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems
Place of PublicationLos Alamitos, Calif.
Pages212-217
Number of pages6
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems, VLSi Design 2010 - Bangalore, India
Duration: 3 Jan 20107 Jan 2010

Other

Other23rd International Conference on VLSI Design, Held jointly with 9th International Conference on Embedded Systems, VLSi Design 2010
CountryIndia
CityBangalore
Period3/01/107/01/10

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