Modeling of high voltage LDMOSFET using industry standard BSIM6 MOS model

Chetan Gupta, Harshit Agarwal, Yogesh S. Chauhan, Sourabh Khandelwal, Yen Kai Lin, Chenming Hu, Renaud Gillon

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

4 Citations (Scopus)

Abstract

In this paper we have shown the modeling of Lateral Double-Diffused MOS (LDMOS) transistor. A LDMOS structure can be divided into two parts, intrinsic channel and extended drift region. The intinsic channel region is modeled by industry standard BSIM6 model and extended drift region has been modeled by the modified CMC standard model of R3. The R3 model of non-linear resistor, which includes physical effects like velocity-saturation, self-heating etc. has been modified to include gate bias dependency. The new model has been validated with technology computer-aided design (TCAD) simulations and measured data from ON Semiconductor. The model (which is the combination of BSIM6 and R3 models) shows excellent agreement with the TCAD simulations and measured data.

Original languageEnglish
Title of host publicationEDSSC 2016
Subtitle of host publicationIEEE International Conference on Electron Devices and Solid-State Circuits : proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages124-127
Number of pages4
ISBN (Electronic)9781509018307
DOIs
Publication statusPublished - 15 Dec 2016
Externally publishedYes
Event2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong
Duration: 3 Aug 20165 Aug 2016

Other

Other2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
CountryHong Kong
CityHong Kong
Period3/08/165/08/16

Keywords

  • BSIM6
  • LDMOS
  • quasi-saturation
  • R3
  • Self-Heating Effect

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    Gupta, C., Agarwal, H., Chauhan, Y. S., Khandelwal, S., Lin, Y. K., Hu, C., & Gillon, R. (2016). Modeling of high voltage LDMOSFET using industry standard BSIM6 MOS model. In EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings (pp. 124-127). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EDSSC.2016.7785225