Modeling of kink-effect in RF behaviour of GaN HEMTs using ASM-HEMT model

Sheikh Aamir Ahsan; Sudip Ghosh; Sourabh Khandelwal; Yogesh Singh Chauhan

doi:10.1109/EDSSC.2016.7785299

Modeling of kink-effect in RF behaviour of GaN HEMTs using ASM-HEMT model

Sheikh Aamir Ahsan, Sudip Ghosh, Sourabh Khandelwal, Yogesh Singh Chauhan

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

32 Citations (Scopus)

Abstract

In this paper, a physics-based compact model is reported that captures the kink-effect observed in S22 for AlGaN/GaN HEMTs. The presence of this kink in the Smith-plot of S22 severely affects the design of the output matching network for amplifiers based on these devices which calls for a precise consideration of this effect. The kink-effect originates due to the ambivalent nature of the output impedance of the intrinsic device, wherein it changes its nature from a low frequency series-RC network to a high frequency parallel-RC network, giving rise to a kink at the frequency where the contours corresponding to low and high frequency approximations intersect each other. The output impedance is a complicated function of the various intrinsic elements of the device small signal model, and all the device intrinsic characteristics in our model arise from a physics-based framework, therefore, making multi-bias validation of the kink-behaviour with measured data possible with sufficient ease.

Original language	English
Title of host publication	EDSSC 2016
Subtitle of host publication	IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	426-429
Number of pages	4
ISBN (Electronic)	9781509018307
DOIs	https://doi.org/10.1109/EDSSC.2016.7785299
Publication status	Published - 15 Dec 2016
Externally published	Yes
Event	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016

Other

Other	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Country/Territory	Hong Kong
City	Hong Kong
Period	3/08/16 → 5/08/16

Keywords

GaN HEMTs
kink-effect
modeling
S₂₂

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10.1109/EDSSC.2016.7785299

Cite this

@inproceedings{e621f31b6f4a4ac0b7a305a706fe4e82,

title = "Modeling of kink-effect in RF behaviour of GaN HEMTs using ASM-HEMT model",

abstract = "In this paper, a physics-based compact model is reported that captures the kink-effect observed in S22 for AlGaN/GaN HEMTs. The presence of this kink in the Smith-plot of S22 severely affects the design of the output matching network for amplifiers based on these devices which calls for a precise consideration of this effect. The kink-effect originates due to the ambivalent nature of the output impedance of the intrinsic device, wherein it changes its nature from a low frequency series-RC network to a high frequency parallel-RC network, giving rise to a kink at the frequency where the contours corresponding to low and high frequency approximations intersect each other. The output impedance is a complicated function of the various intrinsic elements of the device small signal model, and all the device intrinsic characteristics in our model arise from a physics-based framework, therefore, making multi-bias validation of the kink-behaviour with measured data possible with sufficient ease.",

keywords = "GaN HEMTs, kink-effect, modeling, S₂₂",

author = "Ahsan, {Sheikh Aamir} and Sudip Ghosh and Sourabh Khandelwal and Chauhan, {Yogesh Singh}",

year = "2016",

month = dec,

day = "15",

doi = "10.1109/EDSSC.2016.7785299",

language = "English",

pages = "426--429",

booktitle = "EDSSC 2016",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 ; Conference date: 03-08-2016 Through 05-08-2016",

}

Ahsan, SA, Ghosh, S, Khandelwal, S & Chauhan, YS 2016, Modeling of kink-effect in RF behaviour of GaN HEMTs using ASM-HEMT model. in EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 426-429, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, Hong Kong, 3/08/16. https://doi.org/10.1109/EDSSC.2016.7785299

Modeling of kink-effect in RF behaviour of GaN HEMTs using ASM-HEMT model. / Ahsan, Sheikh Aamir; Ghosh, Sudip; Khandelwal, Sourabh et al.
EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 426-429.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Modeling of kink-effect in RF behaviour of GaN HEMTs using ASM-HEMT model

AU - Ahsan, Sheikh Aamir

AU - Ghosh, Sudip

AU - Khandelwal, Sourabh

AU - Chauhan, Yogesh Singh

PY - 2016/12/15

Y1 - 2016/12/15

N2 - In this paper, a physics-based compact model is reported that captures the kink-effect observed in S22 for AlGaN/GaN HEMTs. The presence of this kink in the Smith-plot of S22 severely affects the design of the output matching network for amplifiers based on these devices which calls for a precise consideration of this effect. The kink-effect originates due to the ambivalent nature of the output impedance of the intrinsic device, wherein it changes its nature from a low frequency series-RC network to a high frequency parallel-RC network, giving rise to a kink at the frequency where the contours corresponding to low and high frequency approximations intersect each other. The output impedance is a complicated function of the various intrinsic elements of the device small signal model, and all the device intrinsic characteristics in our model arise from a physics-based framework, therefore, making multi-bias validation of the kink-behaviour with measured data possible with sufficient ease.

AB - In this paper, a physics-based compact model is reported that captures the kink-effect observed in S22 for AlGaN/GaN HEMTs. The presence of this kink in the Smith-plot of S22 severely affects the design of the output matching network for amplifiers based on these devices which calls for a precise consideration of this effect. The kink-effect originates due to the ambivalent nature of the output impedance of the intrinsic device, wherein it changes its nature from a low frequency series-RC network to a high frequency parallel-RC network, giving rise to a kink at the frequency where the contours corresponding to low and high frequency approximations intersect each other. The output impedance is a complicated function of the various intrinsic elements of the device small signal model, and all the device intrinsic characteristics in our model arise from a physics-based framework, therefore, making multi-bias validation of the kink-behaviour with measured data possible with sufficient ease.

KW - GaN HEMTs

KW - kink-effect

KW - modeling

KW - S₂₂

UR - http://www.scopus.com/inward/record.url?scp=85010297599&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2016.7785299

DO - 10.1109/EDSSC.2016.7785299

M3 - Conference proceeding contribution

AN - SCOPUS:85010297599

SP - 426

EP - 429

BT - EDSSC 2016

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

Y2 - 3 August 2016 through 5 August 2016

ER -

Modeling of kink-effect in RF behaviour of GaN HEMTs using ASM-HEMT model

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