Abstract
A new analytical model for a two terminal metal-oxide-Gallium Nitride/Indium Gallium Nitride heterojunction structure is presented. This model characterizes the space charge layer created by electron tunneling in the structure's channel which is made of intrinsic Gallium Nitride. A one dimensional (1-D) analysis is adopted, and a set of hypotheses is stated to frame the present work.
Original language | English |
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Title of host publication | Vision for a greener future : CCECE 2012 |
Subtitle of host publication | IEEE 25th Canadian Conference on Electrical and Computer Engineering |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Number of pages | 7 |
ISBN (Print) | 9781467314336 |
DOIs | |
Publication status | Published - 2012 |
Externally published | Yes |
Event | 2012 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012 - Montreal, QC, Canada Duration: 29 Apr 2012 → 2 May 2012 |
Other
Other | 2012 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012 |
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Country/Territory | Canada |
City | Montreal, QC |
Period | 29/04/12 → 2/05/12 |
Keywords
- Gallium Nitride GaN
- Indium Gallium Nitride In0.5Ga0.5N
- excitons