Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model

Tarik Menkad*, Dimiter Alexandrov, Kenneth Scott A Butcher

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

A new analytical model for a two terminal metal-oxide-Gallium Nitride/Indium Gallium Nitride heterojunction structure is presented. This model characterizes the space charge layer created by electron tunneling in the structure's channel which is made of intrinsic Gallium Nitride. A one dimensional (1-D) analysis is adopted, and a set of hypotheses is stated to frame the present work.

Original languageEnglish
Title of host publicationVision for a greener future : CCECE 2012
Subtitle of host publicationIEEE 25th Canadian Conference on Electrical and Computer Engineering
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages7
ISBN (Print)9781467314336
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2012 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012 - Montreal, QC, Canada
Duration: 29 Apr 20122 May 2012

Other

Other2012 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012
CountryCanada
CityMontreal, QC
Period29/04/122/05/12

Keywords

  • Gallium Nitride GaN
  • Indium Gallium Nitride In0.5Ga0.5N
  • excitons

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