Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model

Tarik Menkad; Dimiter Alexandrov; Kenneth Scott A Butcher

doi:10.1109/CCECE.2012.6334924

Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model

Tarik Menkad^*, Dimiter Alexandrov, Kenneth Scott A Butcher

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

A new analytical model for a two terminal metal-oxide-Gallium Nitride/Indium Gallium Nitride heterojunction structure is presented. This model characterizes the space charge layer created by electron tunneling in the structure's channel which is made of intrinsic Gallium Nitride. A one dimensional (1-D) analysis is adopted, and a set of hypotheses is stated to frame the present work.

Original language	English
Title of host publication	Vision for a greener future : CCECE 2012
Subtitle of host publication	IEEE 25th Canadian Conference on Electrical and Computer Engineering
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	7
ISBN (Print)	9781467314336
DOIs	https://doi.org/10.1109/CCECE.2012.6334924
Publication status	Published - 2012
Externally published	Yes
Event	2012 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012 - Montreal, QC, Canada Duration: 29 Apr 2012 → 2 May 2012

Other

Other	2012 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012
Country/Territory	Canada
City	Montreal, QC
Period	29/04/12 → 2/05/12

Keywords

Gallium Nitride GaN
Indium Gallium Nitride In0.5Ga0.5N
excitons

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10.1109/CCECE.2012.6334924

Cite this

@inproceedings{ddf891c86e264249ac843155358aed10,

title = "Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model",

abstract = "A new analytical model for a two terminal metal-oxide-Gallium Nitride/Indium Gallium Nitride heterojunction structure is presented. This model characterizes the space charge layer created by electron tunneling in the structure's channel which is made of intrinsic Gallium Nitride. A one dimensional (1-D) analysis is adopted, and a set of hypotheses is stated to frame the present work.",

keywords = "Gallium Nitride GaN, Indium Gallium Nitride In0.5Ga0.5N, excitons",

author = "Tarik Menkad and Dimiter Alexandrov and Butcher, \{Kenneth Scott A\}",

year = "2012",

doi = "10.1109/CCECE.2012.6334924",

language = "English",

isbn = "9781467314336",

booktitle = "Vision for a greener future : CCECE 2012",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2012 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012 ; Conference date: 29-04-2012 Through 02-05-2012",

}

Menkad, T, Alexandrov, D & Butcher, KSA 2012, Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model. in Vision for a greener future : CCECE 2012: IEEE 25th Canadian Conference on Electrical and Computer Engineering. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, 2012 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012, Montreal, QC, Canada, 29/04/12. https://doi.org/10.1109/CCECE.2012.6334924

Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model. / Menkad, Tarik; Alexandrov, Dimiter; Butcher, Kenneth Scott A.
Vision for a greener future : CCECE 2012: IEEE 25th Canadian Conference on Electrical and Computer Engineering. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2012.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model

AU - Menkad, Tarik

AU - Alexandrov, Dimiter

AU - Butcher, Kenneth Scott A

PY - 2012

Y1 - 2012

N2 - A new analytical model for a two terminal metal-oxide-Gallium Nitride/Indium Gallium Nitride heterojunction structure is presented. This model characterizes the space charge layer created by electron tunneling in the structure's channel which is made of intrinsic Gallium Nitride. A one dimensional (1-D) analysis is adopted, and a set of hypotheses is stated to frame the present work.

AB - A new analytical model for a two terminal metal-oxide-Gallium Nitride/Indium Gallium Nitride heterojunction structure is presented. This model characterizes the space charge layer created by electron tunneling in the structure's channel which is made of intrinsic Gallium Nitride. A one dimensional (1-D) analysis is adopted, and a set of hypotheses is stated to frame the present work.

KW - Gallium Nitride GaN

KW - Indium Gallium Nitride In0.5Ga0.5N

KW - excitons

UR - https://www.scopus.com/pages/publications/84870436875

U2 - 10.1109/CCECE.2012.6334924

DO - 10.1109/CCECE.2012.6334924

M3 - Conference proceeding contribution

AN - SCOPUS:84870436875

SN - 9781467314336

BT - Vision for a greener future : CCECE 2012

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2012 25th IEEE Canadian Conference on Electrical and Computer Engineering, CCECE 2012

Y2 - 29 April 2012 through 2 May 2012

ER -

Modeling of metal-oxide-semiconductor capacitor on Indium Gallium Nitride 1- channel model

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