TY - JOUR
T1 - Modeling of nonlinear thermal resistance in FinFETs
AU - Kompala, Bala Krishna
AU - Kushwaha, Pragya
AU - Agarwal, Harshit
AU - Khandelwal, Sourabh
AU - Duarte, Juan Pablo
AU - Hu, Chenming
AU - Chauhan, Yogesh Singh
PY - 2016/4/1
Y1 - 2016/4/1
N2 - In this paper, self-consistent three-dimensional (3D) device simulations for exact analysis of thermal transport in FinFETs are performed. We analyze the temperature rise in FinFET devices with the variation in the number of fins (Nfin), shape of fins and fin pitch (Fpitch). We investigate that the thermal resistance Rth has nonlinear dependency on Nfin and Fpitch. We formulate a model for thermal resistance behavior correctly with Nfin and Fpitch variation. The proposed formulation is implemented in industry standard Berkeley short-channel independent gate FET model for common multi-gate transistors (BSIM-CMG) and validated with both experimental data and TCAD simulations.
AB - In this paper, self-consistent three-dimensional (3D) device simulations for exact analysis of thermal transport in FinFETs are performed. We analyze the temperature rise in FinFET devices with the variation in the number of fins (Nfin), shape of fins and fin pitch (Fpitch). We investigate that the thermal resistance Rth has nonlinear dependency on Nfin and Fpitch. We formulate a model for thermal resistance behavior correctly with Nfin and Fpitch variation. The proposed formulation is implemented in industry standard Berkeley short-channel independent gate FET model for common multi-gate transistors (BSIM-CMG) and validated with both experimental data and TCAD simulations.
UR - http://www.scopus.com/inward/record.url?scp=84963705456&partnerID=8YFLogxK
U2 - 10.7567/JJAP.55.04ED11
DO - 10.7567/JJAP.55.04ED11
M3 - Article
AN - SCOPUS:84963705456
VL - 55
SP - 1
EP - 5
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 4
M1 - 04ED11
ER -