Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs

Sudip Ghosh; Sheikh Aamir Ahsan; Yogesh Singh Chauhan; Sourabh Khandelwal

doi:10.1109/EDSSC.2016.7785254

Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs

Sudip Ghosh, Sheikh Aamir Ahsan, Yogesh Singh Chauhan, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

48 Citations (Scopus)

Abstract

In this paper, we present the modeling of source/drain access resistances in the surface potential based model named 'Advanced Spice Model for High Electron Mobility Transistor' (ASM-HEMT) for AlGaN/GaN HEMTs. From TCAD simulation, it is shown that nonlinear source and drain resistances increase with drain current which is due to the saturation of electron velocity in this region. Accurate modeling of this access resistance is of immense importance to correctly predict the drain current, transconductance (g_m) and hence the transit frequency (f_T) at higher current. The model shows excellent agreement with experimental data at room temperature. Variation of measured ON-resistance (R_on) with temperature is well predicted by model which justifies the accuracy of temperature dependence model of source/drain resistances.

Original language	English
Title of host publication	EDSSC 2016
Subtitle of host publication	IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	247-250
Number of pages	4
ISBN (Electronic)	9781509018307
DOIs	https://doi.org/10.1109/EDSSC.2016.7785254
Publication status	Published - 15 Dec 2016
Externally published	Yes
Event	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016

Other

Other	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Country/Territory	Hong Kong
City	Hong Kong
Period	3/08/16 → 5/08/16

Keywords

access region
AlGaN/GaN HEMTs
Source/drain resistance
temperature dependence

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10.1109/EDSSC.2016.7785254

Cite this

Ghosh, S., Ahsan, S. A., Chauhan, Y. S., & Khandelwal, S. (2016). Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs. In EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings (pp. 247-250). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EDSSC.2016.7785254

@inproceedings{47f92af424c149209cdd1210f4bb6847,

title = "Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs",

abstract = "In this paper, we present the modeling of source/drain access resistances in the surface potential based model named 'Advanced Spice Model for High Electron Mobility Transistor' (ASM-HEMT) for AlGaN/GaN HEMTs. From TCAD simulation, it is shown that nonlinear source and drain resistances increase with drain current which is due to the saturation of electron velocity in this region. Accurate modeling of this access resistance is of immense importance to correctly predict the drain current, transconductance (gm) and hence the transit frequency (fT) at higher current. The model shows excellent agreement with experimental data at room temperature. Variation of measured ON-resistance (Ron) with temperature is well predicted by model which justifies the accuracy of temperature dependence model of source/drain resistances.",

keywords = "access region, AlGaN/GaN HEMTs, Source/drain resistance, temperature dependence",

author = "Sudip Ghosh and Ahsan, {Sheikh Aamir} and Chauhan, {Yogesh Singh} and Sourabh Khandelwal",

year = "2016",

month = dec,

day = "15",

doi = "10.1109/EDSSC.2016.7785254",

language = "English",

pages = "247--250",

booktitle = "EDSSC 2016",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 ; Conference date: 03-08-2016 Through 05-08-2016",

}

Ghosh, S, Ahsan, SA, Chauhan, YS & Khandelwal, S 2016, Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs. in EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 247-250, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, Hong Kong, 3/08/16. https://doi.org/10.1109/EDSSC.2016.7785254

Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs. / Ghosh, Sudip; Ahsan, Sheikh Aamir; Chauhan, Yogesh Singh et al.
EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 247-250.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs

AU - Ghosh, Sudip

AU - Ahsan, Sheikh Aamir

AU - Chauhan, Yogesh Singh

AU - Khandelwal, Sourabh

PY - 2016/12/15

Y1 - 2016/12/15

N2 - In this paper, we present the modeling of source/drain access resistances in the surface potential based model named 'Advanced Spice Model for High Electron Mobility Transistor' (ASM-HEMT) for AlGaN/GaN HEMTs. From TCAD simulation, it is shown that nonlinear source and drain resistances increase with drain current which is due to the saturation of electron velocity in this region. Accurate modeling of this access resistance is of immense importance to correctly predict the drain current, transconductance (gm) and hence the transit frequency (fT) at higher current. The model shows excellent agreement with experimental data at room temperature. Variation of measured ON-resistance (Ron) with temperature is well predicted by model which justifies the accuracy of temperature dependence model of source/drain resistances.

AB - In this paper, we present the modeling of source/drain access resistances in the surface potential based model named 'Advanced Spice Model for High Electron Mobility Transistor' (ASM-HEMT) for AlGaN/GaN HEMTs. From TCAD simulation, it is shown that nonlinear source and drain resistances increase with drain current which is due to the saturation of electron velocity in this region. Accurate modeling of this access resistance is of immense importance to correctly predict the drain current, transconductance (gm) and hence the transit frequency (fT) at higher current. The model shows excellent agreement with experimental data at room temperature. Variation of measured ON-resistance (Ron) with temperature is well predicted by model which justifies the accuracy of temperature dependence model of source/drain resistances.

KW - access region

KW - AlGaN/GaN HEMTs

KW - Source/drain resistance

KW - temperature dependence

UR - http://www.scopus.com/inward/record.url?scp=85010377972&partnerID=8YFLogxK

U2 - 10.1109/EDSSC.2016.7785254

DO - 10.1109/EDSSC.2016.7785254

M3 - Conference proceeding contribution

AN - SCOPUS:85010377972

SP - 247

EP - 250

BT - EDSSC 2016

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016

Y2 - 3 August 2016 through 5 August 2016

ER -

Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs

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