Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs

Sudip Ghosh, Sheikh Aamir Ahsan, Yogesh Singh Chauhan, Sourabh Khandelwal

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

18 Citations (Scopus)

Abstract

In this paper, we present the modeling of source/drain access resistances in the surface potential based model named 'Advanced Spice Model for High Electron Mobility Transistor' (ASM-HEMT) for AlGaN/GaN HEMTs. From TCAD simulation, it is shown that nonlinear source and drain resistances increase with drain current which is due to the saturation of electron velocity in this region. Accurate modeling of this access resistance is of immense importance to correctly predict the drain current, transconductance (gm) and hence the transit frequency (fT) at higher current. The model shows excellent agreement with experimental data at room temperature. Variation of measured ON-resistance (Ron) with temperature is well predicted by model which justifies the accuracy of temperature dependence model of source/drain resistances.

Original languageEnglish
Title of host publicationEDSSC 2016
Subtitle of host publicationIEEE International Conference on Electron Devices and Solid-State Circuits : proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages247-250
Number of pages4
ISBN (Electronic)9781509018307
DOIs
Publication statusPublished - 15 Dec 2016
Externally publishedYes
Event2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong
Duration: 3 Aug 20165 Aug 2016

Other

Other2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
CountryHong Kong
CityHong Kong
Period3/08/165/08/16

Keywords

  • access region
  • AlGaN/GaN HEMTs
  • Source/drain resistance
  • temperature dependence

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