Modeling of temperature effects in a surface-potential based ASM-HEMT model

S. Ghosh, K. Sharma, S. Agnihotri, Y. S. Chauhan, S. Khandelwal, T. A. Fjeldly, F. M. Yigletu, B. Iniguez

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

6 Citations (Scopus)

Abstract

Here, we present the modeling of temperature effects in the surface potential based 'Advanced Spice Model for High Electron Mobility Transistor' (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.

Original languageEnglish
Title of host publication2014 IEEE 2nd International Conference on Emerging Electronics (ICEE 2014)
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781467365277
ISBN (Print)9781467365291
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014 - Bengaluru, India
Duration: 3 Dec 20146 Dec 2014

Other

Other2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014
CountryIndia
CityBengaluru
Period3/12/146/12/14

Keywords

  • AlGaN/GaN HEMTs
  • compact model
  • Temperature effects

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