Modeling of temperature effects in a surface-potential based ASM-HEMT model

S. Ghosh; K. Sharma; S. Agnihotri; Y. S. Chauhan; S. Khandelwal; T. A. Fjeldly; F. M. Yigletu; B. Iniguez

doi:10.1109/ICEmElec.2014.7151197

Modeling of temperature effects in a surface-potential based ASM-HEMT model

S. Ghosh, K. Sharma, S. Agnihotri, Y. S. Chauhan, S. Khandelwal, T. A. Fjeldly, F. M. Yigletu, B. Iniguez

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

14 Citations (Scopus)

Abstract

Here, we present the modeling of temperature effects in the surface potential based 'Advanced Spice Model for High Electron Mobility Transistor' (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, g_m and g_ds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.

Original language	English
Title of host publication	2014 IEEE 2nd International Conference on Emerging Electronics (ICEE 2014)
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781467365277
ISBN (Print)	9781467365291
DOIs	https://doi.org/10.1109/ICEmElec.2014.7151197
Publication status	Published - 2014
Externally published	Yes
Event	2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014 - Bengaluru, India Duration: 3 Dec 2014 → 6 Dec 2014

Other

Other	2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014
Country/Territory	India
City	Bengaluru
Period	3/12/14 → 6/12/14

Keywords

AlGaN/GaN HEMTs
compact model
Temperature effects

Access to Document

10.1109/ICEmElec.2014.7151197

Cite this

Ghosh, S., Sharma, K., Agnihotri, S., Chauhan, Y. S., Khandelwal, S., Fjeldly, T. A., Yigletu, F. M., & Iniguez, B. (2014). Modeling of temperature effects in a surface-potential based ASM-HEMT model. In 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE 2014) (pp. 1-4). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ICEmElec.2014.7151197

@inproceedings{2f0236e7265b4a90ad3cf1f38e3ebdc2,

title = "Modeling of temperature effects in a surface-potential based ASM-HEMT model",

abstract = "Here, we present the modeling of temperature effects in the surface potential based 'Advanced Spice Model for High Electron Mobility Transistor' (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.",

keywords = "AlGaN/GaN HEMTs, compact model, Temperature effects",

author = "S. Ghosh and K. Sharma and S. Agnihotri and Chauhan, \{Y. S.\} and S. Khandelwal and Fjeldly, \{T. A.\} and Yigletu, \{F. M.\} and B. Iniguez",

year = "2014",

doi = "10.1109/ICEmElec.2014.7151197",

language = "English",

isbn = "9781467365291",

pages = "1--4",

booktitle = "2014 IEEE 2nd International Conference on Emerging Electronics (ICEE 2014)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014 ; Conference date: 03-12-2014 Through 06-12-2014",

}

Ghosh, S, Sharma, K, Agnihotri, S, Chauhan, YS, Khandelwal, S, Fjeldly, TA, Yigletu, FM & Iniguez, B 2014, Modeling of temperature effects in a surface-potential based ASM-HEMT model. in 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE 2014). Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014, Bengaluru, India, 3/12/14. https://doi.org/10.1109/ICEmElec.2014.7151197

Modeling of temperature effects in a surface-potential based ASM-HEMT model. / Ghosh, S.; Sharma, K.; Agnihotri, S. et al.
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE 2014). Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2014. p. 1-4.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Modeling of temperature effects in a surface-potential based ASM-HEMT model

AU - Ghosh, S.

AU - Sharma, K.

AU - Agnihotri, S.

AU - Chauhan, Y. S.

AU - Khandelwal, S.

AU - Fjeldly, T. A.

AU - Yigletu, F. M.

AU - Iniguez, B.

PY - 2014

Y1 - 2014

N2 - Here, we present the modeling of temperature effects in the surface potential based 'Advanced Spice Model for High Electron Mobility Transistor' (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.

AB - Here, we present the modeling of temperature effects in the surface potential based 'Advanced Spice Model for High Electron Mobility Transistor' (ASM-HEMT) for AlGaN/GaN HEMTs. We extract the temperature dependencies of mobility, saturation velocity, cut-off voltage and access resistance parameters of this model. This enables accurate modeling of I-V, gm and gds at multiple temperatures. Our model is compared with measured data and shows excellent fitting for a wide range of temperature.

KW - AlGaN/GaN HEMTs

KW - compact model

KW - Temperature effects

UR - https://www.scopus.com/pages/publications/84941061592

U2 - 10.1109/ICEmElec.2014.7151197

DO - 10.1109/ICEmElec.2014.7151197

M3 - Conference proceeding contribution

AN - SCOPUS:84941061592

SN - 9781467365291

SP - 1

EP - 4

BT - 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE 2014)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 2014 2nd IEEE International Conference on Emerging Electronics, ICEE 2014

Y2 - 3 December 2014 through 6 December 2014

ER -

Modeling of temperature effects in a surface-potential based ASM-HEMT model

Abstract

Other

Keywords

Access to Document

Other files and links

Fingerprint

Cite this