We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5 × 1017 - 1 × 1020 cm-3. The influence of several factors, such as nonparabolicity, electron-electron interaction, and electron-impurity interaction on both the spectral shape and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.
|Number of pages||4069182|
|Journal||Physical Review B: Condensed Matter and Materials Physics|
|Publication status||Published - 15 Jul 2001|