Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN

B. Arnaudov*, T. Paskova, E. M. Goldys, S. Evtimova, B. Monemar

*Corresponding author for this work

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5 × 1017 - 1 × 1020 cm-3. The influence of several factors, such as nonparabolicity, electron-electron interaction, and electron-impurity interaction on both the spectral shape and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.

Original languageEnglish
Article number045213
Pages (from-to)452131-4521312
Number of pages4069182
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume64
Issue number4
Publication statusPublished - 15 Jul 2001

Fingerprint Dive into the research topics of 'Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN'. Together they form a unique fingerprint.

Cite this