Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN

B. Arnaudov; T. Paskova; E. M. Goldys; S. Evtimova; B. Monemar

Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN

B. Arnaudov^*, T. Paskova, E. M. Goldys, S. Evtimova, B. Monemar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5 × 10¹⁷ - 1 × 10²⁰ cm^-3. The influence of several factors, such as nonparabolicity, electron-electron interaction, and electron-impurity interaction on both the spectral shape and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.

Original language	English
Article number	045213
Pages (from-to)	452131-4521312
Number of pages	4069182
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	64
Issue number	4
Publication status	Published - 15 Jul 2001

Cite this

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title = "Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN",

abstract = "We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5 × 1017 - 1 × 1020 cm-3. The influence of several factors, such as nonparabolicity, electron-electron interaction, and electron-impurity interaction on both the spectral shape and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.",

author = "B. Arnaudov and T. Paskova and Goldys, {E. M.} and S. Evtimova and B. Monemar",

year = "2001",

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volume = "64",

pages = "452131--4521312",

journal = "Physical Review B: Condensed Matter and Materials Physics",

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TY - JOUR

T1 - Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN

AU - Arnaudov, B.

AU - Paskova, T.

AU - Goldys, E. M.

AU - Evtimova, S.

AU - Monemar, B.

PY - 2001/7/15

Y1 - 2001/7/15

N2 - We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5 × 1017 - 1 × 1020 cm-3. The influence of several factors, such as nonparabolicity, electron-electron interaction, and electron-impurity interaction on both the spectral shape and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.

AB - We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5 × 1017 - 1 × 1020 cm-3. The influence of several factors, such as nonparabolicity, electron-electron interaction, and electron-impurity interaction on both the spectral shape and energy position and the effective gap narrowing are taken into account. The calculated properties of the free-electron-related emission bands are used to interpret the experimental photoluminescence and cathodoluminescence spectra of GaN epitaxial layers.

UR - http://www.scopus.com/inward/record.url?scp=0035878365&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035878365

SN - 0163-1829

VL - 64

SP - 452131

EP - 4521312

JO - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

IS - 4

M1 - 045213

ER -

Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN

Abstract

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