Modeling of threshold voltage for operating point using industry standard BSIM-IMG model

Pragya Kushwaha, Rahul Agarwal, Harshit Agarwal, Yogesh Singh Chauhan, Sourabh Khandelwal, Juan P. Duarte, Yen Kai Lin, Huan Lin Chang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

5 Citations (Scopus)

Abstract

Threshold voltage is an important device parameter for MOSFET modeling as circuit designer needs to know the threshold voltage to bias the transistor in the required region of operation. In this paper, we have proposed an approach to calculate the threshold voltage for operating point information in the BSIM-IMG model which is the latest industry standard compact model for FDSOI transistors. The BSIM-IMG is the surface potential based model, and therefore threshold voltage is not explicitly available. The proposed model takes care of back-bias and other real device effects (CLM, DIBL etc) accurately. The model is developed to fulfill the demand of semiconductor companies for their commercial SPICE simulators and PDKs. We have shown model comparison with various popular threshold voltage extraction techniques. The model shows very good agreement with the measured data over wide range of device geometries, drain and body biases.

Original languageEnglish
Title of host publicationEDSSC 2016
Subtitle of host publicationIEEE International Conference on Electron Devices and Solid-State Circuits : proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages216-219
Number of pages4
ISBN (Electronic)9781509018307
DOIs
Publication statusPublished - 15 Dec 2016
Externally publishedYes
Event2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong
Duration: 3 Aug 20165 Aug 2016

Other

Other2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
CountryHong Kong
CityHong Kong
Period3/08/165/08/16

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