Modeling of threshold voltage for operating point using industry standard BSIM-IMG model

Pragya Kushwaha; Rahul Agarwal; Harshit Agarwal; Yogesh Singh Chauhan; Sourabh Khandelwal; Juan P. Duarte; Yen Kai Lin; Huan Lin Chang; Chenming Hu

doi:10.1109/EDSSC.2016.7785247

Modeling of threshold voltage for operating point using industry standard BSIM-IMG model

Pragya Kushwaha, Rahul Agarwal, Harshit Agarwal, Yogesh Singh Chauhan, Sourabh Khandelwal, Juan P. Duarte, Yen Kai Lin, Huan Lin Chang, Chenming Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

6 Citations (Scopus)

Abstract

Threshold voltage is an important device parameter for MOSFET modeling as circuit designer needs to know the threshold voltage to bias the transistor in the required region of operation. In this paper, we have proposed an approach to calculate the threshold voltage for operating point information in the BSIM-IMG model which is the latest industry standard compact model for FDSOI transistors. The BSIM-IMG is the surface potential based model, and therefore threshold voltage is not explicitly available. The proposed model takes care of back-bias and other real device effects (CLM, DIBL etc) accurately. The model is developed to fulfill the demand of semiconductor companies for their commercial SPICE simulators and PDKs. We have shown model comparison with various popular threshold voltage extraction techniques. The model shows very good agreement with the measured data over wide range of device geometries, drain and body biases.

Original language	English
Title of host publication	EDSSC 2016
Subtitle of host publication	IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	216-219
Number of pages	4
ISBN (Electronic)	9781509018307
DOIs	https://doi.org/10.1109/EDSSC.2016.7785247
Publication status	Published - 15 Dec 2016
Externally published	Yes
Event	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 - Hong Kong, Hong Kong Duration: 3 Aug 2016 → 5 Aug 2016

Other

Other	2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016
Country/Territory	Hong Kong
City	Hong Kong
Period	3/08/16 → 5/08/16

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10.1109/EDSSC.2016.7785247

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Kushwaha, P., Agarwal, R., Agarwal, H., Chauhan, Y. S., Khandelwal, S., Duarte, J. P., Lin, Y. K., Chang, H. L., & Hu, C. (2016). Modeling of threshold voltage for operating point using industry standard BSIM-IMG model. In EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings (pp. 216-219). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/EDSSC.2016.7785247

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title = "Modeling of threshold voltage for operating point using industry standard BSIM-IMG model",

abstract = "Threshold voltage is an important device parameter for MOSFET modeling as circuit designer needs to know the threshold voltage to bias the transistor in the required region of operation. In this paper, we have proposed an approach to calculate the threshold voltage for operating point information in the BSIM-IMG model which is the latest industry standard compact model for FDSOI transistors. The BSIM-IMG is the surface potential based model, and therefore threshold voltage is not explicitly available. The proposed model takes care of back-bias and other real device effects (CLM, DIBL etc) accurately. The model is developed to fulfill the demand of semiconductor companies for their commercial SPICE simulators and PDKs. We have shown model comparison with various popular threshold voltage extraction techniques. The model shows very good agreement with the measured data over wide range of device geometries, drain and body biases.",

author = "Pragya Kushwaha and Rahul Agarwal and Harshit Agarwal and Chauhan, {Yogesh Singh} and Sourabh Khandelwal and Duarte, {Juan P.} and Lin, {Yen Kai} and Chang, {Huan Lin} and Chenming Hu",

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doi = "10.1109/EDSSC.2016.7785247",

language = "English",

pages = "216--219",

booktitle = "EDSSC 2016",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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note = "2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016 ; Conference date: 03-08-2016 Through 05-08-2016",

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Kushwaha, P, Agarwal, R, Agarwal, H, Chauhan, YS, Khandelwal, S, Duarte, JP, Lin, YK, Chang, HL & Hu, C 2016, Modeling of threshold voltage for operating point using industry standard BSIM-IMG model. in EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 216-219, 2016 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2016, Hong Kong, Hong Kong, 3/08/16. https://doi.org/10.1109/EDSSC.2016.7785247

Modeling of threshold voltage for operating point using industry standard BSIM-IMG model. / Kushwaha, Pragya; Agarwal, Rahul; Agarwal, Harshit et al.
EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 216-219.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

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AU - Kushwaha, Pragya

AU - Agarwal, Rahul

AU - Agarwal, Harshit

AU - Chauhan, Yogesh Singh

AU - Khandelwal, Sourabh

AU - Duarte, Juan P.

AU - Lin, Yen Kai

AU - Chang, Huan Lin

AU - Hu, Chenming

PY - 2016/12/15

Y1 - 2016/12/15

N2 - Threshold voltage is an important device parameter for MOSFET modeling as circuit designer needs to know the threshold voltage to bias the transistor in the required region of operation. In this paper, we have proposed an approach to calculate the threshold voltage for operating point information in the BSIM-IMG model which is the latest industry standard compact model for FDSOI transistors. The BSIM-IMG is the surface potential based model, and therefore threshold voltage is not explicitly available. The proposed model takes care of back-bias and other real device effects (CLM, DIBL etc) accurately. The model is developed to fulfill the demand of semiconductor companies for their commercial SPICE simulators and PDKs. We have shown model comparison with various popular threshold voltage extraction techniques. The model shows very good agreement with the measured data over wide range of device geometries, drain and body biases.

AB - Threshold voltage is an important device parameter for MOSFET modeling as circuit designer needs to know the threshold voltage to bias the transistor in the required region of operation. In this paper, we have proposed an approach to calculate the threshold voltage for operating point information in the BSIM-IMG model which is the latest industry standard compact model for FDSOI transistors. The BSIM-IMG is the surface potential based model, and therefore threshold voltage is not explicitly available. The proposed model takes care of back-bias and other real device effects (CLM, DIBL etc) accurately. The model is developed to fulfill the demand of semiconductor companies for their commercial SPICE simulators and PDKs. We have shown model comparison with various popular threshold voltage extraction techniques. The model shows very good agreement with the measured data over wide range of device geometries, drain and body biases.

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Kushwaha P, Agarwal R, Agarwal H, Chauhan YS, Khandelwal S, Duarte JP et al. Modeling of threshold voltage for operating point using industry standard BSIM-IMG model. In EDSSC 2016: IEEE International Conference on Electron Devices and Solid-State Circuits : proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2016. p. 216-219 doi: 10.1109/EDSSC.2016.7785247

Modeling of threshold voltage for operating point using industry standard BSIM-IMG model

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