Modeling of trapping effects in GaN HEMTs

Shantanu Agnihotri, Sudip Ghosh, Avirup Dasgupta, Sheikh Aamir Ahsan, Sourabh Khandelwal, Yogesh Singh Chauhan

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

6 Citations (Scopus)

Abstract

In this work, we study the trapping in GaN power HEMTs and discuss effect of traps on device characteristics. Simulation setups for analysis of switching collapse and current collapse observed in pulsed I-V are also presented. We propose an RC network based trap model to capture the effect of trapping in a surface potential based compact model for GaN HEMTs. The proposed model has been verified with the hardware data for various quiescent biases and frequencies, and the model results are in excellent agreement with the hardware data.

Original languageEnglish
Title of host publication2015 Annual IEEE India Conference (INDICON 2015)
Subtitle of host publicationNew Delhi, India 17-20 December 2015
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781467373999, 9781467365406
ISBN (Print)9781467374002
DOIs
Publication statusPublished - 29 Mar 2016
Externally publishedYes
Event12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015 - New Delhi, India
Duration: 17 Dec 201520 Dec 2015

Other

Other12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015
CountryIndia
CityNew Delhi
Period17/12/1520/12/15

Keywords

  • Current Collapse
  • GaN HEMT
  • Switching Collapse
  • Trapping

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