Modeling of trapping effects in GaN HEMTs

Shantanu Agnihotri; Sudip Ghosh; Avirup Dasgupta; Sheikh Aamir Ahsan; Sourabh Khandelwal; Yogesh Singh Chauhan

doi:10.1109/INDICON.2015.7443658

Modeling of trapping effects in GaN HEMTs

Shantanu Agnihotri, Sudip Ghosh, Avirup Dasgupta, Sheikh Aamir Ahsan, Sourabh Khandelwal, Yogesh Singh Chauhan

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

10 Citations (Scopus)

Abstract

In this work, we study the trapping in GaN power HEMTs and discuss effect of traps on device characteristics. Simulation setups for analysis of switching collapse and current collapse observed in pulsed I-V are also presented. We propose an RC network based trap model to capture the effect of trapping in a surface potential based compact model for GaN HEMTs. The proposed model has been verified with the hardware data for various quiescent biases and frequencies, and the model results are in excellent agreement with the hardware data.

Original language	English
Title of host publication	2015 Annual IEEE India Conference (INDICON 2015)
Subtitle of host publication	New Delhi, India 17-20 December 2015
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781467373999, 9781467365406
ISBN (Print)	9781467374002
DOIs	https://doi.org/10.1109/INDICON.2015.7443658
Publication status	Published - 29 Mar 2016
Externally published	Yes
Event	12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015 - New Delhi, India Duration: 17 Dec 2015 → 20 Dec 2015

Other

Other	12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015
Country/Territory	India
City	New Delhi
Period	17/12/15 → 20/12/15

Keywords

Current Collapse
GaN HEMT
Switching Collapse
Trapping

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10.1109/INDICON.2015.7443658

Cite this

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title = "Modeling of trapping effects in GaN HEMTs",

abstract = "In this work, we study the trapping in GaN power HEMTs and discuss effect of traps on device characteristics. Simulation setups for analysis of switching collapse and current collapse observed in pulsed I-V are also presented. We propose an RC network based trap model to capture the effect of trapping in a surface potential based compact model for GaN HEMTs. The proposed model has been verified with the hardware data for various quiescent biases and frequencies, and the model results are in excellent agreement with the hardware data.",

keywords = "Current Collapse, GaN HEMT, Switching Collapse, Trapping",

author = "Shantanu Agnihotri and Sudip Ghosh and Avirup Dasgupta and Ahsan, {Sheikh Aamir} and Sourabh Khandelwal and Chauhan, {Yogesh Singh}",

year = "2016",

month = mar,

day = "29",

doi = "10.1109/INDICON.2015.7443658",

language = "English",

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pages = "1--4",

booktitle = "2015 Annual IEEE India Conference (INDICON 2015)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

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Agnihotri, S, Ghosh, S, Dasgupta, A, Ahsan, SA, Khandelwal, S & Chauhan, YS 2016, Modeling of trapping effects in GaN HEMTs. in 2015 Annual IEEE India Conference (INDICON 2015): New Delhi, India 17-20 December 2015., 1570193689, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015, New Delhi, India, 17/12/15. https://doi.org/10.1109/INDICON.2015.7443658

Modeling of trapping effects in GaN HEMTs. / Agnihotri, Shantanu; Ghosh, Sudip; Dasgupta, Avirup et al.
2015 Annual IEEE India Conference (INDICON 2015): New Delhi, India 17-20 December 2015. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2016. p. 1-4 1570193689.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Modeling of trapping effects in GaN HEMTs

AU - Agnihotri, Shantanu

AU - Ghosh, Sudip

AU - Dasgupta, Avirup

AU - Ahsan, Sheikh Aamir

AU - Khandelwal, Sourabh

AU - Chauhan, Yogesh Singh

PY - 2016/3/29

Y1 - 2016/3/29

N2 - In this work, we study the trapping in GaN power HEMTs and discuss effect of traps on device characteristics. Simulation setups for analysis of switching collapse and current collapse observed in pulsed I-V are also presented. We propose an RC network based trap model to capture the effect of trapping in a surface potential based compact model for GaN HEMTs. The proposed model has been verified with the hardware data for various quiescent biases and frequencies, and the model results are in excellent agreement with the hardware data.

AB - In this work, we study the trapping in GaN power HEMTs and discuss effect of traps on device characteristics. Simulation setups for analysis of switching collapse and current collapse observed in pulsed I-V are also presented. We propose an RC network based trap model to capture the effect of trapping in a surface potential based compact model for GaN HEMTs. The proposed model has been verified with the hardware data for various quiescent biases and frequencies, and the model results are in excellent agreement with the hardware data.

KW - Current Collapse

KW - GaN HEMT

KW - Switching Collapse

KW - Trapping

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SP - 1

EP - 4

BT - 2015 Annual IEEE India Conference (INDICON 2015)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

T2 - 12th IEEE International Conference Electronics, Energy, Environment, Communication, Computer, Control, INDICON 2015

Y2 - 17 December 2015 through 20 December 2015

ER -

Modeling of trapping effects in GaN HEMTs

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