@inproceedings{a77d3ed51f854760b5e81a2f9d0b0579,
title = "Modeling substrate voltage effects on GaN I-V characteristics with ASM-HEMT model",
abstract = "The substrate voltage Vb for GaN on silicon power devices affects their characteristics. The impact of substrate voltage becomes especially critical for the emerging monolithic and integrated circuits. To the best of the authors' knowledge, available GaN compact models neglect the effect of substrate voltage on device characteristics as the substrate is usually grounded in most applications. In this paper, we develop a physics-based model for the substrate-voltage dependence of I-V characteristics of GaN devices. The developed model shows excellent agreement with measurements for GaN devices in both linear and saturation and for different gate widths.",
author = "Sourabh Khandelwal and Gordon Stecklein and Tom Herman",
year = "2022",
doi = "10.1109/APEC43599.2022.9773778",
language = "English",
isbn = "9781665406895",
publisher = "Institute of Electrical and Electronics Engineers (IEEE)",
pages = "1731--1734",
booktitle = "2022 IEEE Applied Power Electronics Conference and Exposition (APEC) proceedings",
address = "United States",
note = "37th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2022 ; Conference date: 20-03-2022 Through 24-03-2022",
}