Modeling the impact of the high-field region on the C-V characteristics in GaN HEMTs

Jason Hodges*, Sayed Ali Albahrani, Dirk Schwantuschke, Friedbert van Raay, Peter Brückner, Sourabh Khandelwal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Chemical Compounds

Engineering & Materials Science