Modelling Drain and Gate Dependence of HEMT 1-50 GHz, Small-Signal S-Parameters, and D.C. Drain Current

Simon J. Mahon; David J. Skellern

doi:10.1109/22.362988

Modelling Drain and Gate Dependence of HEMT 1-50 GHz, Small-Signal S-Parameters, and D.C. Drain Current

Simon J. Mahon, David J. Skellern

Department of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We present refinements to a previously validated HEMT model that improves the model's accuracy as a function of drain bias for simulating d.c. drain current and 1–50 GHz, small-signal S-parameters. By comparing simulation data with experimental data for a 0.4-μm-gate pseudomorphic HEMT, we have been able to establish the accuracy of the refined model, which predicts the device's d.c. current and S-parameters as a function of the applied drain and gate biases to within an accuracy of ~5%. The core of the model and, in particular, its bias dependence, are directly dependent on the HEMT wafer structure and the physical gate length.

Original language	English
Pages (from-to)	213-216
Number of pages	4
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	43
Issue number	1
DOIs	https://doi.org/10.1109/22.362988
Publication status	Published - 1995

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abstract = "We present refinements to a previously validated HEMT model that improves the model's accuracy as a function of drain bias for simulating d.c. drain current and 1–50 GHz, small-signal S-parameters. By comparing simulation data with experimental data for a 0.4-μm-gate pseudomorphic HEMT, we have been able to establish the accuracy of the refined model, which predicts the device's d.c. current and S-parameters as a function of the applied drain and gate biases to within an accuracy of ~5%. The core of the model and, in particular, its bias dependence, are directly dependent on the HEMT wafer structure and the physical gate length.",

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