Modelling kinetics of the boron-oxygen defect system

Brett Hallam; Malcolm Abbott; Jose Bilbao; Phill Hamer; Nicholas Gorman; Moonyong Kim; Daniel Chen; Katherine Hammerton; David Payne; Catherine Chan; Nitin Nampalli; Stuart Wenham

doi:10.1016/j.egypro.2016.07.008

Modelling kinetics of the boron-oxygen defect system

Brett Hallam^*, Malcolm Abbott, Jose Bilbao, Phill Hamer, Nicholas Gorman, Moonyong Kim, Daniel Chen, Katherine Hammerton, David Payne, Catherine Chan, Nitin Nampalli, Stuart Wenham

^*Corresponding author for this work

Research output: Contribution to journal › Conference paper › peer-review

21 Citations (Scopus)

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Abstract

Here we report on modeling kinetics of the boron-oxygen defect system in crystalline silicon solar cells. The model, as supported by experimental data, highlights the importance of defect formation for mitigating carrier-induced degradation. The inability to rapidly and effectively passivate boron-oxygen defects is primarily due to the unavailability of the defects for passivation, rather than any "weakness" of the passivation reaction. The theoretical long-term stability of modules in the field is investigated as a worst-case scenario using typical meteorological year data and the System Advisor Model (SAM). With effective mounting of the modules, the modelling indicates that even in desert locations, destabilisation of the passivation is no concern within 40 years. We also incorporate the quadratic dependence of the defect formation rate on the total hole concentration, and highlight the influence of changing doping densities or changing illumination intensity on the CID mitigation process.

Original language	English
Pages (from-to)	42-51
Number of pages	10
Journal	Energy Procedia
Volume	92
DOIs	https://doi.org/10.1016/j.egypro.2016.07.008
Publication status	Published - 1 Aug 2016
Externally published	Yes
Event	6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016 - Chambery, France Duration: 7 Mar 2016 → 9 Mar 2016

Bibliographical note

Copyright the Author(s) 2016. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

Keywords

boron-oxygen
carrier-induced degradation
hydrogen passivation
light-induced degradation
regeneration

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10.1016/j.egypro.2016.07.008Licence: CC BY-NC-ND

Publisher version (open access)Final published version, 551 KBLicence: CC BY-NC-ND

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title = "Modelling kinetics of the boron-oxygen defect system",

abstract = "Here we report on modeling kinetics of the boron-oxygen defect system in crystalline silicon solar cells. The model, as supported by experimental data, highlights the importance of defect formation for mitigating carrier-induced degradation. The inability to rapidly and effectively passivate boron-oxygen defects is primarily due to the unavailability of the defects for passivation, rather than any {"}weakness{"} of the passivation reaction. The theoretical long-term stability of modules in the field is investigated as a worst-case scenario using typical meteorological year data and the System Advisor Model (SAM). With effective mounting of the modules, the modelling indicates that even in desert locations, destabilisation of the passivation is no concern within 40 years. We also incorporate the quadratic dependence of the defect formation rate on the total hole concentration, and highlight the influence of changing doping densities or changing illumination intensity on the CID mitigation process.",

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author = "Brett Hallam and Malcolm Abbott and Jose Bilbao and Phill Hamer and Nicholas Gorman and Moonyong Kim and Daniel Chen and Katherine Hammerton and David Payne and Catherine Chan and Nitin Nampalli and Stuart Wenham",

note = "Copyright the Author(s) 2016. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.; 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016 ; Conference date: 07-03-2016 Through 09-03-2016",

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Modelling kinetics of the boron-oxygen defect system. / Hallam, Brett; Abbott, Malcolm; Bilbao, Jose; Hamer, Phill; Gorman, Nicholas; Kim, Moonyong; Chen, Daniel; Hammerton, Katherine; Payne, David; Chan, Catherine; Nampalli, Nitin; Wenham, Stuart.

In: Energy Procedia, Vol. 92, 01.08.2016, p. 42-51.

Research output: Contribution to journal › Conference paper › peer-review

TY - JOUR

T1 - Modelling kinetics of the boron-oxygen defect system

AU - Hallam, Brett

AU - Abbott, Malcolm

AU - Bilbao, Jose

AU - Hamer, Phill

AU - Gorman, Nicholas

AU - Kim, Moonyong

AU - Chen, Daniel

AU - Hammerton, Katherine

AU - Payne, David

AU - Chan, Catherine

AU - Nampalli, Nitin

AU - Wenham, Stuart

N1 - Copyright the Author(s) 2016. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

PY - 2016/8/1

Y1 - 2016/8/1

N2 - Here we report on modeling kinetics of the boron-oxygen defect system in crystalline silicon solar cells. The model, as supported by experimental data, highlights the importance of defect formation for mitigating carrier-induced degradation. The inability to rapidly and effectively passivate boron-oxygen defects is primarily due to the unavailability of the defects for passivation, rather than any "weakness" of the passivation reaction. The theoretical long-term stability of modules in the field is investigated as a worst-case scenario using typical meteorological year data and the System Advisor Model (SAM). With effective mounting of the modules, the modelling indicates that even in desert locations, destabilisation of the passivation is no concern within 40 years. We also incorporate the quadratic dependence of the defect formation rate on the total hole concentration, and highlight the influence of changing doping densities or changing illumination intensity on the CID mitigation process.

AB - Here we report on modeling kinetics of the boron-oxygen defect system in crystalline silicon solar cells. The model, as supported by experimental data, highlights the importance of defect formation for mitigating carrier-induced degradation. The inability to rapidly and effectively passivate boron-oxygen defects is primarily due to the unavailability of the defects for passivation, rather than any "weakness" of the passivation reaction. The theoretical long-term stability of modules in the field is investigated as a worst-case scenario using typical meteorological year data and the System Advisor Model (SAM). With effective mounting of the modules, the modelling indicates that even in desert locations, destabilisation of the passivation is no concern within 40 years. We also incorporate the quadratic dependence of the defect formation rate on the total hole concentration, and highlight the influence of changing doping densities or changing illumination intensity on the CID mitigation process.

KW - boron-oxygen

KW - carrier-induced degradation

KW - hydrogen passivation

KW - light-induced degradation

KW - regeneration

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DO - 10.1016/j.egypro.2016.07.008

M3 - Conference paper

AN - SCOPUS:85014424831

VL - 92

SP - 42

EP - 51

JO - Energy Procedia

JF - Energy Procedia

SN - 1876-6102

T2 - 6th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2016

Y2 - 7 March 2016 through 9 March 2016

ER -

Modelling kinetics of the boron-oxygen defect system

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