Molecular engineering of hole-selective layer for high band gap perovskites for highly efficient and stable perovskite-silicon tandem solar cells

Guoliang Wang, Jianghui Zheng*, Weiyuan Duan, Jiong Yang, Md Arafat Mahmud, Qing Lian, Shi Tang, Chwenhaw Liao, Jueming Bing, Jianpeng Yi, Tik Lun Leung, Xin Cui, Hongjun Chen, Feng Jiang, Yulan Huang, Andreas Lambertz, Marko Jankovec, Marko Topič, Stephen Bremner, Yuan-Zhu ZhangChun Cheng*, Kaining Ding*, Anita Ho-Baillie*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)

Abstract

In this work, a novel carbazole-based SAM (Ph-2PACz) was developed for facilitating efficient hole extraction and suppressing carrier recombination in high-band-gap (1.67 eV) perovskites for single-junction and tandem-cell demonstrations. The champion 21.3% efficient 1.67 eV cell produced a high fill factor (FF) of 82.6% and an open-circuit voltage (VOC) of 1.26 V, representing low band-gap-voltage offset at 0.41 V. When Ph-2PACz was applied to the top perovskite cell for a monolithic perovskite-Si tandem, a PCE of 28.9% (on 1 cm2) and a VOC of 1.91 V were obtained. When encapsulated, a tandem cell demonstrated excellent stability under continuous 1 sun illumination (680 h) and damp heat (280 h at 85°C + 85% relative humidity) and passed the International Electrotechnical Commission (IEC) 61215 thermal cycling (200 cycles between −40°C and 85°C) test, retaining 98.8% of the initial PCE.

Original languageEnglish
Pages (from-to)2583-2594
Number of pages13
JournalJoule
Volume7
Issue number11
DOIs
Publication statusPublished - 15 Nov 2023

Keywords

  • hole-selective contact
  • IEC
  • International Electrotechnical Commission stability test
  • perovskite-silicon tandem
  • SAM
  • self-assembled monolayer

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