Monolithic integration of continuous-relief diffractive structures with vertical-cavity surface-emitting lasers

Mikael Karlsson*, F. Nikolajeff, H. Martinsson, A. Larsson

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The transfer of diffractive optical elements (DOE) made in e-beam resist into gallium arsenide for monolithic integration with vertical-cavity surface-emitting laser was studied. The DOEs were fabricated with direct-wire electron-beam lithography which allows continuous-relief elements to be exposed. The transfer of the diffractive structures from resist into gallium arsenide was performed in an inductively coupled plasma (ICP) etching system using chlorine-based plasma chemistry.

Original languageEnglish
Pages (from-to)71-72
Number of pages2
JournalConference Digest - IEEE International Semiconductor Laser Conference
Publication statusPublished - 2002

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