The transfer of diffractive optical elements (DOE) made in e-beam resist into gallium arsenide for monolithic integration with vertical-cavity surface-emitting laser was studied. The DOEs were fabricated with direct-wire electron-beam lithography which allows continuous-relief elements to be exposed. The transfer of the diffractive structures from resist into gallium arsenide was performed in an inductively coupled plasma (ICP) etching system using chlorine-based plasma chemistry.
|Number of pages||2|
|Journal||Conference Digest - IEEE International Semiconductor Laser Conference|
|Publication status||Published - 2002|