Monolithic integration of continuous-relief diffractive structures with vertical-cavity surface-emitting lasers

Mikael Karlsson; F. Nikolajeff; H. Martinsson; A. Larsson

Monolithic integration of continuous-relief diffractive structures with vertical-cavity surface-emitting lasers

Mikael Karlsson^*, F. Nikolajeff, H. Martinsson, A. Larsson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The transfer of diffractive optical elements (DOE) made in e-beam resist into gallium arsenide for monolithic integration with vertical-cavity surface-emitting laser was studied. The DOEs were fabricated with direct-wire electron-beam lithography which allows continuous-relief elements to be exposed. The transfer of the diffractive structures from resist into gallium arsenide was performed in an inductively coupled plasma (ICP) etching system using chlorine-based plasma chemistry.

Original language	English
Pages (from-to)	71-72
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
Publication status	Published - 2002

Cite this

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title = "Monolithic integration of continuous-relief diffractive structures with vertical-cavity surface-emitting lasers",

abstract = "The transfer of diffractive optical elements (DOE) made in e-beam resist into gallium arsenide for monolithic integration with vertical-cavity surface-emitting laser was studied. The DOEs were fabricated with direct-wire electron-beam lithography which allows continuous-relief elements to be exposed. The transfer of the diffractive structures from resist into gallium arsenide was performed in an inductively coupled plasma (ICP) etching system using chlorine-based plasma chemistry.",

author = "Mikael Karlsson and F. Nikolajeff and H. Martinsson and A. Larsson",

year = "2002",

language = "English",

pages = "71--72",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

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T1 - Monolithic integration of continuous-relief diffractive structures with vertical-cavity surface-emitting lasers

AU - Karlsson, Mikael

AU - Nikolajeff, F.

AU - Martinsson, H.

AU - Larsson, A.

PY - 2002

Y1 - 2002

N2 - The transfer of diffractive optical elements (DOE) made in e-beam resist into gallium arsenide for monolithic integration with vertical-cavity surface-emitting laser was studied. The DOEs were fabricated with direct-wire electron-beam lithography which allows continuous-relief elements to be exposed. The transfer of the diffractive structures from resist into gallium arsenide was performed in an inductively coupled plasma (ICP) etching system using chlorine-based plasma chemistry.

AB - The transfer of diffractive optical elements (DOE) made in e-beam resist into gallium arsenide for monolithic integration with vertical-cavity surface-emitting laser was studied. The DOEs were fabricated with direct-wire electron-beam lithography which allows continuous-relief elements to be exposed. The transfer of the diffractive structures from resist into gallium arsenide was performed in an inductively coupled plasma (ICP) etching system using chlorine-based plasma chemistry.

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M3 - Article

AN - SCOPUS:0036453513

SN - 0899-9406

SP - 71

EP - 72

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

ER -

Monolithic integration of continuous-relief diffractive structures with vertical-cavity surface-emitting lasers

Abstract

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