Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

M. Godlewski*, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.

    Original languageEnglish
    JournalMRS Internet Journal of Nitride Semiconductor Research
    Volume3
    Publication statusPublished - 1998

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