Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

M. Godlewski; E. M. Goldys; M. R. Philips; J. P. Bergman; B. Monemar; R. Langer; A. Barski

Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

M. Godlewski^*, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.

Original language	English
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	3
Publication status	Published - 1998

Cite this

@article{0cec6f9886c54bddb014eaeab0b7887c,

title = "Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si",

abstract = "Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.",

author = "M. Godlewski and Goldys, {E. M.} and Philips, {M. R.} and Bergman, {J. P.} and B. Monemar and R. Langer and A. Barski",

year = "1998",

language = "English",

volume = "3",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

AU - Godlewski, M.

AU - Goldys, E. M.

AU - Philips, M. R.

AU - Bergman, J. P.

AU - Monemar, B.

AU - Langer, R.

AU - Barski, A.

PY - 1998

Y1 - 1998

N2 - Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.

AB - Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.

UR - http://www.scopus.com/inward/record.url?scp=4043182625&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:4043182625

SN - 1092-5783

VL - 3

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

ER -

Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

Abstract

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