Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

M. Godlewski*, E. M. Goldys, M. R. Philips, J. P. Bergman, B. Monemar, R. Langer, A. Barski

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume3
Publication statusPublished - 1998

Fingerprint Dive into the research topics of 'Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si'. Together they form a unique fingerprint.

  • Cite this

    Godlewski, M., Goldys, E. M., Philips, M. R., Bergman, J. P., Monemar, B., Langer, R., & Barski, A. (1998). Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si. MRS Internet Journal of Nitride Semiconductor Research, 3.