Abstract
Properties of GaN epilayers grown by laser-assisted chemical vapour deposition are discussed. Good crystallinity and surface morphology of the films is demonstrated. Micro-Raman spectra are explained by scattering by small, randomly oriented cubic phase units present in the GaN film.
Original language | English |
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Pages (from-to) | 331-335 |
Number of pages | 5 |
Journal | Acta Physica Polonica A |
Volume | 94 |
Issue number | 2 |
Publication status | Published - 1998 |