Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

F. Sarti, G. Muñoz Matutano, D. Bauer, N. Dotti, S. Bietti, G. Isella, A. Vinattieri, S. Sanguinetti, M. Gurioli

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device.

Original languageEnglish
Article number224314
Pages (from-to)1-3
Number of pages3
JournalJournal of Applied Physics
Volume114
Issue number22
DOIs
Publication statusPublished - 14 Dec 2013
Externally publishedYes

Fingerprint

Dive into the research topics of 'Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates'. Together they form a unique fingerprint.

Cite this