Nanoarchitechtonics of visible-blind ultraviolet photodetector materials

critical features and nano-microfabrication

Noushin Nasiri, Dayong Jin, Antonio Tricoli*

*Corresponding author for this work

Research output: Contribution to journalReview article

11 Citations (Scopus)

Abstract

Accurate measurement of ultraviolet radiation is key to many technologies including wearable devices for skin cancer prevention, optical communication systems, and missile launch detection. Nanostructuring of wide bandgap semiconductors, such as GaN, ZnO, and SiC, promises some benefits over established commercial solutions relying on n–p type Si-homojunction technology. In the past decade, a variety of carefully nanostructured architectures have been demonstrated as efficient designs for visible-blind UV photodetectors featuring superior detectivity, thermal stability, robust radiation hardness, and very low operation bias and power consumption. Here, a comprehensive review of the latest achievements on ultraviolet photodetector materials is presented, with focus on the multiscale engineering of composition and nano-microscale morphology. The review concludes with a critical assessment and comparison of state-of-the-art devices aiming to provide guidelines and research directions for the next generation of UV photodetector materials.

Original languageEnglish
Article number1800580
Pages (from-to)1-18
Number of pages18
JournalAdvanced Optical Materials
Volume7
Issue number2
Early online date6 Sep 2018
DOIs
Publication statusPublished - 18 Jan 2019
Externally publishedYes

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Keywords

  • GaN
  • nanoarchitectonics
  • TiO₂
  • UV photodetectors
  • visible-blind photodetectors
  • wearable devices
  • wide-bandgap semiconductors
  • ZnO

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