Nanofabrication with the helium ion microscope

Stuart A. Boden; Zakaria Moktadir; Feras M. Alkhalil; Hiroshi Mizuta; Harvey N. Rutt; Darren M. Bagnall

doi:10.1557/opl.2012.978

Nanofabrication with the helium ion microscope

Stuart A. Boden, Zakaria Moktadir, Feras M. Alkhalil, Hiroshi Mizuta, Harvey N. Rutt, Darren M. Bagnall

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

4 Citations (Scopus)

Abstract

Although initially developed as an imaging tool, the helium ion microscope (HIM) is finding applications in nanofabrication as its focused ion beam is capable of highly-localized material modification. In this study, an external pattern generator is used to explore the capabilities of the HIM for localized milling of a ∼7 nm thick layer of silicon-on-insulator, with atomic force microscopy (AFM) used to characterize the resulting patterns. The dose and patterned area size are varied and milling to depths >7 nm is demonstrated. At high doses and large areas, protuberances form, primarily due to sub-surface swelling caused by the implanted helium. The results suggest this technique could enable the rapid prototyping of next-generation nanoelectronic devices in thin silicon.

Original language	English
Title of host publication	Mechanical Nanofabrication, Nanopatterning and Nanoassembly
Pages	43-48
Number of pages	6
Volume	1412
DOIs	https://doi.org/10.1557/opl.2012.978
Publication status	Published - 2011
Externally published	Yes
Event	2011 MRS Fall Meeting - Boston, MA, United States Duration: 28 Nov 2011 → 3 Dec 2011

Conference

Conference	2011 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	28/11/11 → 3/12/11

Keywords

ion-beam processing
ion-solid interactions
si

Access to Document

10.1557/opl.2012.978

Cite this

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title = "Nanofabrication with the helium ion microscope",

abstract = "Although initially developed as an imaging tool, the helium ion microscope (HIM) is finding applications in nanofabrication as its focused ion beam is capable of highly-localized material modification. In this study, an external pattern generator is used to explore the capabilities of the HIM for localized milling of a ∼7 nm thick layer of silicon-on-insulator, with atomic force microscopy (AFM) used to characterize the resulting patterns. The dose and patterned area size are varied and milling to depths >7 nm is demonstrated. At high doses and large areas, protuberances form, primarily due to sub-surface swelling caused by the implanted helium. The results suggest this technique could enable the rapid prototyping of next-generation nanoelectronic devices in thin silicon.",

keywords = "ion-beam processing, ion-solid interactions, si",

author = "Boden, \{Stuart A.\} and Zakaria Moktadir and Alkhalil, \{Feras M.\} and Hiroshi Mizuta and Rutt, \{Harvey N.\} and Bagnall, \{Darren M.\}",

year = "2011",

doi = "10.1557/opl.2012.978",

language = "English",

isbn = "9781627482264",

volume = "1412",

pages = "43--48",

booktitle = "Mechanical Nanofabrication, Nanopatterning and Nanoassembly",

note = "2011 MRS Fall Meeting ; Conference date: 28-11-2011 Through 03-12-2011",

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TY - GEN

T1 - Nanofabrication with the helium ion microscope

AU - Boden, Stuart A.

AU - Moktadir, Zakaria

AU - Alkhalil, Feras M.

AU - Mizuta, Hiroshi

AU - Rutt, Harvey N.

AU - Bagnall, Darren M.

PY - 2011

Y1 - 2011

N2 - Although initially developed as an imaging tool, the helium ion microscope (HIM) is finding applications in nanofabrication as its focused ion beam is capable of highly-localized material modification. In this study, an external pattern generator is used to explore the capabilities of the HIM for localized milling of a ∼7 nm thick layer of silicon-on-insulator, with atomic force microscopy (AFM) used to characterize the resulting patterns. The dose and patterned area size are varied and milling to depths >7 nm is demonstrated. At high doses and large areas, protuberances form, primarily due to sub-surface swelling caused by the implanted helium. The results suggest this technique could enable the rapid prototyping of next-generation nanoelectronic devices in thin silicon.

AB - Although initially developed as an imaging tool, the helium ion microscope (HIM) is finding applications in nanofabrication as its focused ion beam is capable of highly-localized material modification. In this study, an external pattern generator is used to explore the capabilities of the HIM for localized milling of a ∼7 nm thick layer of silicon-on-insulator, with atomic force microscopy (AFM) used to characterize the resulting patterns. The dose and patterned area size are varied and milling to depths >7 nm is demonstrated. At high doses and large areas, protuberances form, primarily due to sub-surface swelling caused by the implanted helium. The results suggest this technique could enable the rapid prototyping of next-generation nanoelectronic devices in thin silicon.

KW - ion-beam processing

KW - ion-solid interactions

KW - si

UR - https://www.scopus.com/pages/publications/84880534182

U2 - 10.1557/opl.2012.978

DO - 10.1557/opl.2012.978

M3 - Conference proceeding contribution

AN - SCOPUS:84880534182

SN - 9781627482264

VL - 1412

SP - 43

EP - 48

BT - Mechanical Nanofabrication, Nanopatterning and Nanoassembly

T2 - 2011 MRS Fall Meeting

Y2 - 28 November 2011 through 3 December 2011

ER -

Nanofabrication with the helium ion microscope

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Keywords

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