Nanoparticles doped with TM and RE ions for applications in optoelectronics

M. Godlewski; S. Yatsunenko; A. Nadolska; A. Opalińska; W. Łojkowski; K. Drozdowicz-Tomsia; E. M. Goldys

doi:10.1016/j.optmat.2007.10.020

Nanoparticles doped with TM and RE ions for applications in optoelectronics

M. Godlewski^*, S. Yatsunenko, A. Nadolska, A. Opalińska, W. Łojkowski, K. Drozdowicz-Tomsia, E. M. Goldys

^*Corresponding author for this work

MQ Photonics Research Centre

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Nanoparticles of wide band gap compounds, when doped with rare earth or transition metal ions, are perspective candidates for efficient phosphors in a new generation of light sources for an overhead illumination, i.e., in compact fluorescence lamps and in semiconductor-based white light emitting diodes. Mechanisms of emission enhancement in doped nanoparticles are discussed based on the relevant experimental results. Mechanisms observed are due to carrier confinement, n-type co-doping, due to surface plasmons generation and super radiance.

Original language	English
Pages (from-to)	490-495
Number of pages	6
Journal	Optical Materials
Volume	31
Issue number	3
DOIs	https://doi.org/10.1016/j.optmat.2007.10.020
Publication status	Published - Jan 2009

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10.1016/j.optmat.2007.10.020

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title = "Nanoparticles doped with TM and RE ions for applications in optoelectronics",

abstract = "Nanoparticles of wide band gap compounds, when doped with rare earth or transition metal ions, are perspective candidates for efficient phosphors in a new generation of light sources for an overhead illumination, i.e., in compact fluorescence lamps and in semiconductor-based white light emitting diodes. Mechanisms of emission enhancement in doped nanoparticles are discussed based on the relevant experimental results. Mechanisms observed are due to carrier confinement, n-type co-doping, due to surface plasmons generation and super radiance.",

author = "M. Godlewski and S. Yatsunenko and A. Nadolska and A. Opali{\'n}ska and W. {\L}ojkowski and K. Drozdowicz-Tomsia and Goldys, \{E. M.\}",

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T1 - Nanoparticles doped with TM and RE ions for applications in optoelectronics

AU - Godlewski, M.

AU - Yatsunenko, S.

AU - Nadolska, A.

AU - Opalińska, A.

AU - Łojkowski, W.

AU - Drozdowicz-Tomsia, K.

AU - Goldys, E. M.

PY - 2009/1

Y1 - 2009/1

N2 - Nanoparticles of wide band gap compounds, when doped with rare earth or transition metal ions, are perspective candidates for efficient phosphors in a new generation of light sources for an overhead illumination, i.e., in compact fluorescence lamps and in semiconductor-based white light emitting diodes. Mechanisms of emission enhancement in doped nanoparticles are discussed based on the relevant experimental results. Mechanisms observed are due to carrier confinement, n-type co-doping, due to surface plasmons generation and super radiance.

AB - Nanoparticles of wide band gap compounds, when doped with rare earth or transition metal ions, are perspective candidates for efficient phosphors in a new generation of light sources for an overhead illumination, i.e., in compact fluorescence lamps and in semiconductor-based white light emitting diodes. Mechanisms of emission enhancement in doped nanoparticles are discussed based on the relevant experimental results. Mechanisms observed are due to carrier confinement, n-type co-doping, due to surface plasmons generation and super radiance.

UR - https://www.scopus.com/pages/publications/57249100728

U2 - 10.1016/j.optmat.2007.10.020

DO - 10.1016/j.optmat.2007.10.020

M3 - Article

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VL - 31

SP - 490

EP - 495

JO - Optical Materials

JF - Optical Materials

IS - 3

ER -

Nanoparticles doped with TM and RE ions for applications in optoelectronics

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