Nanoscale characterization of carrier dynamic and surface passivation in InGaN/GaN multiple quantum wells on GaN nanorods

Weijian Chen, Xiaoming Wen*, Michael Latzel, Martin Heilmann, Jianfeng Yang, Xi Dai, Shujuan Huang, Santosh Shrestha, Robert Patterson, Silke Christiansen, Gavin Conibeer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

Using advanced two-photon excitation confocal microscopy, associated with time-resolved spectroscopy, we characterize InGaN/GaN multiple quantum wells on nanorod heterostructures and demonstrate the passivation effect of a KOH treatment. High-quality InGaN/GaN nanorods were fabricated using nanosphere lithography as a candidate material for light-emitting diode devices. The depth- and time-resolved characterization at the nanoscale provides detailed carrier dynamic analysis helpful for understanding the optical properties. The nanoscale spatially resolved images of InGaN quantum well and defects were acquired simultaneously. We demonstrate that nanorod etching improves light extraction efficiency, and a proper KOH treatment has been found to reduce the surface defects efficiently and enhance the luminescence. The optical characterization techniques provide depth-resolved and time-resolved carrier dynamics with nanoscale spatially resolved mapping, which is crucial for a comprehensive and thorough understanding of nanostructured materials and provides novel insight into the improvement of materials fabrication and applications.

Original languageEnglish
Pages (from-to)31887-31893
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number46
DOIs
Publication statusPublished - 23 Nov 2016
Externally publishedYes

Keywords

  • nanoscale optical characterization
  • GaN
  • multiple quantum well
  • nanorods
  • two-photon excitation
  • surface passivation

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