Near-field investigation of porous silicon photoluminescence modification after oxidation in water

M. Juan, J. S. Bouillard, J. Plain*, G. Lerondel, P. M. Adam, R. Bachelot, P. Royer

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We report on local photo-induced oxidation of porous silicon in water at room temperature. Starting from a nonluminescent sample, the oxidation process induces luminescence which was found to first increase and then decrease as a function of the oxidation time. A clear blue shift is also observed. This effect is believed to be owing to size modification of silicon nanocrystallites and thus is explained in terms of quantum confinement. Optical near-field images and spectrum are used to monitor the photoluminescence modifications after oxidation. As the photoluminescence can be widely tuned in wavelength and intensity, this method offers a way to pattern the emission properties of the sample.

Original languageEnglish
Pages (from-to)469-474
Number of pages6
JournalJournal of Microscopy
Volume229
Issue number3
DOIs
Publication statusPublished - Mar 2008

Keywords

  • Oxidation
  • Porous silicon
  • SNOM

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