Near-field investigation of porous silicon photoluminescence modification after oxidation in water

M. Juan; J. S. Bouillard; J. Plain; G. Lerondel; P. M. Adam; R. Bachelot; P. Royer

doi:10.1111/j.1365-2818.2008.01930.x

Near-field investigation of porous silicon photoluminescence modification after oxidation in water

M. Juan, J. S. Bouillard, J. Plain^*, G. Lerondel, P. M. Adam, R. Bachelot, P. Royer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We report on local photo-induced oxidation of porous silicon in water at room temperature. Starting from a nonluminescent sample, the oxidation process induces luminescence which was found to first increase and then decrease as a function of the oxidation time. A clear blue shift is also observed. This effect is believed to be owing to size modification of silicon nanocrystallites and thus is explained in terms of quantum confinement. Optical near-field images and spectrum are used to monitor the photoluminescence modifications after oxidation. As the photoluminescence can be widely tuned in wavelength and intensity, this method offers a way to pattern the emission properties of the sample.

Original language	English
Pages (from-to)	469-474
Number of pages	6
Journal	Journal of Microscopy
Volume	229
Issue number	3
DOIs	https://doi.org/10.1111/j.1365-2818.2008.01930.x
Publication status	Published - Mar 2008

Keywords

Oxidation
Porous silicon
SNOM

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10.1111/j.1365-2818.2008.01930.x

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title = "Near-field investigation of porous silicon photoluminescence modification after oxidation in water",

abstract = "We report on local photo-induced oxidation of porous silicon in water at room temperature. Starting from a nonluminescent sample, the oxidation process induces luminescence which was found to first increase and then decrease as a function of the oxidation time. A clear blue shift is also observed. This effect is believed to be owing to size modification of silicon nanocrystallites and thus is explained in terms of quantum confinement. Optical near-field images and spectrum are used to monitor the photoluminescence modifications after oxidation. As the photoluminescence can be widely tuned in wavelength and intensity, this method offers a way to pattern the emission properties of the sample.",

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AU - Juan, M.

AU - Bouillard, J. S.

AU - Plain, J.

AU - Lerondel, G.

AU - Adam, P. M.

AU - Bachelot, R.

AU - Royer, P.

PY - 2008/3

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N2 - We report on local photo-induced oxidation of porous silicon in water at room temperature. Starting from a nonluminescent sample, the oxidation process induces luminescence which was found to first increase and then decrease as a function of the oxidation time. A clear blue shift is also observed. This effect is believed to be owing to size modification of silicon nanocrystallites and thus is explained in terms of quantum confinement. Optical near-field images and spectrum are used to monitor the photoluminescence modifications after oxidation. As the photoluminescence can be widely tuned in wavelength and intensity, this method offers a way to pattern the emission properties of the sample.

AB - We report on local photo-induced oxidation of porous silicon in water at room temperature. Starting from a nonluminescent sample, the oxidation process induces luminescence which was found to first increase and then decrease as a function of the oxidation time. A clear blue shift is also observed. This effect is believed to be owing to size modification of silicon nanocrystallites and thus is explained in terms of quantum confinement. Optical near-field images and spectrum are used to monitor the photoluminescence modifications after oxidation. As the photoluminescence can be widely tuned in wavelength and intensity, this method offers a way to pattern the emission properties of the sample.

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JO - Journal of Microscopy

JF - Journal of Microscopy

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ER -

Near-field investigation of porous silicon photoluminescence modification after oxidation in water

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Keywords

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