Bi and Nd co-doped CsI (Bi, Nd:CsI) crystals were grown by a vertical Bridgman method. The result by X-ray diffraction shows that the as-grown Bi, Nd:CsI crystal exhibits a single-phase (Pm3m) CsI, and the doping of Bi and Nd ions into the Bi, Nd:CsI crystal lattice does not affect its basic crystal structure. It was found that the co-doping could lead to the decrease of Bi doping concentration. The co-doped crystal was annealed, and the absorption and emission spectra of the crystal were determined. The results show that Bi and Nd co-doping can increase the concentration of V'Cs. A high temperature annealing can obtain a lower valence state of the Bi ions luminous clusters, which improves the near-infrared broadband luminescence properties of the crystal. The Bi, Nd:CsI crystal has two Raman characteristic peaks of near-infrared broadband luminescence centers, which are located at 164 and 176 cm-1, respectively. In addition, the formation of Bi+ and Bi2+ bound up with the aggregation of high-valence Bi ions was also discussed.
|Translated title of the contribution||Near-infrared broadband luminescence properties of Bi and Nd Co-doped CsI crystals|
|Number of pages||6|
|Journal||Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society|
|Publication status||Published - Jun 2013|
- Cesium iodide crystal
- Near-infrared luminescence