Bi 和 Nd 共掺 CsI 晶体近红外宽带发光性能

Translated title of the contribution: Near-infrared broadband luminescence properties of Bi and Nd Co-doped CsI crystals

Xiao Fan, Liangbi Su, Jun Xu*, Xiantao Jiang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

Bi and Nd co-doped CsI (Bi, Nd:CsI) crystals were grown by a vertical Bridgman method. The result by X-ray diffraction shows that the as-grown Bi, Nd:CsI crystal exhibits a single-phase (Pm3m) CsI, and the doping of Bi and Nd ions into the Bi, Nd:CsI crystal lattice does not affect its basic crystal structure. It was found that the co-doping could lead to the decrease of Bi doping concentration. The co-doped crystal was annealed, and the absorption and emission spectra of the crystal were determined. The results show that Bi and Nd co-doping can increase the concentration of V'Cs. A high temperature annealing can obtain a lower valence state of the Bi ions luminous clusters, which improves the near-infrared broadband luminescence properties of the crystal. The Bi, Nd:CsI crystal has two Raman characteristic peaks of near-infrared broadband luminescence centers, which are located at 164 and 176 cm-1, respectively. In addition, the formation of Bi+ and Bi2+ bound up with the aggregation of high-valence Bi ions was also discussed.

Original languageChinese
Pages (from-to)797-802
Number of pages6
JournalKuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society
Volume41
Issue number6
DOIs
Publication statusPublished - Jun 2013
Externally publishedYes

Keywords

  • Bismuth
  • Cesium iodide crystal
  • Co-doping
  • Near-infrared luminescence
  • Neodymium

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