TY - JOUR
T1 - Near-infrared photoluminescence spectra in Bi-doped CsI crystal
T2 - Evidence for Bi-valence conversions and Bi ion aggregation
AU - Su, Liangbi
AU - Zhao, Hengyu
AU - Li, Hongjun
AU - Zheng, Lihe
AU - Fan, Xiao
AU - Jiang, Xiantao
AU - Tang, Huili
AU - Ren, Guohao
AU - Xu, Jun
AU - Ryba-Romanowski, Witold
AU - Lisiecki, Radoslaw
AU - Solarz, Piotr
PY - 2012
Y1 - 2012
N2 - Bi-doped CsI crystals exhibited near-infrared ultra-broadband photoluminescence around 1216 nm and 1560 nm, depending on the bismuth doping levels, which were ascribed to Bi+ and Bi2
+ centers, respectively. The crystal chemistry of the Bi3+ to Bi+ reduction and Bi2
+ dimer formation in CsI lattice were investigated. Thermal treatments including annealing and quenching were carried out to study the thermal behaviors of the two emission bands. The evolution of absorption and emission spectra of Bi:CsI crystals indicating the Bi-aggregation and valence conversions under thermal activation. The process of Bi aggregation was observed to be a second-order reaction with activation energy of 0.33 eV. Bi2
+ was identified as the origin of the 1560 nm emission band with ESR spectra. A simple lattice structure diagram was developed to illustrate the physical processes in Bi:CsI crystals induced by thermal activation.
AB - Bi-doped CsI crystals exhibited near-infrared ultra-broadband photoluminescence around 1216 nm and 1560 nm, depending on the bismuth doping levels, which were ascribed to Bi+ and Bi2
+ centers, respectively. The crystal chemistry of the Bi3+ to Bi+ reduction and Bi2
+ dimer formation in CsI lattice were investigated. Thermal treatments including annealing and quenching were carried out to study the thermal behaviors of the two emission bands. The evolution of absorption and emission spectra of Bi:CsI crystals indicating the Bi-aggregation and valence conversions under thermal activation. The process of Bi aggregation was observed to be a second-order reaction with activation energy of 0.33 eV. Bi2
+ was identified as the origin of the 1560 nm emission band with ESR spectra. A simple lattice structure diagram was developed to illustrate the physical processes in Bi:CsI crystals induced by thermal activation.
UR - http://www.scopus.com/inward/record.url?scp=84866542806&partnerID=8YFLogxK
U2 - 10.1364/OME.2.000757
DO - 10.1364/OME.2.000757
M3 - Article
AN - SCOPUS:84866542806
VL - 2
SP - 757
EP - 764
JO - Optical Materials Express
JF - Optical Materials Express
SN - 2159-3930
IS - 6
ER -