Near thresholdless laser operation at room temperature

I. Prieto; J. M. Llorens; L. E. Muñoz-Camúñez; A. G. Taboada; J. Canet-Ferrer; J. M. Ripalda; C. Robles; G. Muñoz-Matutano; J. P. Martínez-Pastor; P. A. Postigo

doi:10.1364/OPTICA.2.000066

Near thresholdless laser operation at room temperature

I. Prieto, J. M. Llorens, L. E. Muñoz-Camúñez, A. G. Taboada, J. Canet-Ferrer, J. M. Ripalda, C. Robles, G. Muñoz-Matutano, J. P. Martínez-Pastor, P. A. Postigo^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

The development of a thresholdless laser operating above room temperature (RT) is key for the future replacement of electronics with photonic integrated circuits, enabling an increase of several orders of magnitude in computing speeds. Recently, thresholdless lasing characteristics at low temperature (4 K) have been demonstrated. However, for practical applications, RT laser emission becomes necessary. Here we report experimental evidence that is compatible with a laser based on InAsSb quantum dots embedded in a photonic-crystal microcavity that exhibits an ultralow-power threshold (860 nW) and high efficiency (ß = 0.85), thus operating in the near-thresholdless regime at RT in the 1.3 µm spectral window. The results open up a wide range of opportunities for RT applications of ultralow threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.

Original language	English
Pages (from-to)	66-69
Number of pages	4
Journal	Optica
Volume	2
Issue number	1
DOIs	https://doi.org/10.1364/OPTICA.2.000066
Publication status	Published - 20 Jan 2015
Externally published	Yes

Keywords

Distributed-feedback
Lasers
Optoelectronics
Photonic crystals
Photonic integrated circuits

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10.1364/OPTICA.2.000066

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title = "Near thresholdless laser operation at room temperature",

abstract = "The development of a thresholdless laser operating above room temperature (RT) is key for the future replacement of electronics with photonic integrated circuits, enabling an increase of several orders of magnitude in computing speeds. Recently, thresholdless lasing characteristics at low temperature (4 K) have been demonstrated. However, for practical applications, RT laser emission becomes necessary. Here we report experimental evidence that is compatible with a laser based on InAsSb quantum dots embedded in a photonic-crystal microcavity that exhibits an ultralow-power threshold (860 nW) and high efficiency ({\ss} = 0.85), thus operating in the near-thresholdless regime at RT in the 1.3 µm spectral window. The results open up a wide range of opportunities for RT applications of ultralow threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.",

keywords = "Distributed-feedback, Lasers, Optoelectronics, Photonic crystals, Photonic integrated circuits",

author = "I. Prieto and Llorens, {J. M.} and Mu{\~n}oz-Cam{\'u}{\~n}ez, {L. E.} and Taboada, {A. G.} and J. Canet-Ferrer and Ripalda, {J. M.} and C. Robles and G. Mu{\~n}oz-Matutano and Mart{\'i}nez-Pastor, {J. P.} and Postigo, {P. A.}",

year = "2015",

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doi = "10.1364/OPTICA.2.000066",

language = "English",

volume = "2",

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journal = "Optica",

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T1 - Near thresholdless laser operation at room temperature

AU - Prieto, I.

AU - Llorens, J. M.

AU - Muñoz-Camúñez, L. E.

AU - Taboada, A. G.

AU - Canet-Ferrer, J.

AU - Ripalda, J. M.

AU - Robles, C.

AU - Muñoz-Matutano, G.

AU - Martínez-Pastor, J. P.

AU - Postigo, P. A.

PY - 2015/1/20

Y1 - 2015/1/20

N2 - The development of a thresholdless laser operating above room temperature (RT) is key for the future replacement of electronics with photonic integrated circuits, enabling an increase of several orders of magnitude in computing speeds. Recently, thresholdless lasing characteristics at low temperature (4 K) have been demonstrated. However, for practical applications, RT laser emission becomes necessary. Here we report experimental evidence that is compatible with a laser based on InAsSb quantum dots embedded in a photonic-crystal microcavity that exhibits an ultralow-power threshold (860 nW) and high efficiency (ß = 0.85), thus operating in the near-thresholdless regime at RT in the 1.3 µm spectral window. The results open up a wide range of opportunities for RT applications of ultralow threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.

AB - The development of a thresholdless laser operating above room temperature (RT) is key for the future replacement of electronics with photonic integrated circuits, enabling an increase of several orders of magnitude in computing speeds. Recently, thresholdless lasing characteristics at low temperature (4 K) have been demonstrated. However, for practical applications, RT laser emission becomes necessary. Here we report experimental evidence that is compatible with a laser based on InAsSb quantum dots embedded in a photonic-crystal microcavity that exhibits an ultralow-power threshold (860 nW) and high efficiency (ß = 0.85), thus operating in the near-thresholdless regime at RT in the 1.3 µm spectral window. The results open up a wide range of opportunities for RT applications of ultralow threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.

KW - Distributed-feedback

KW - Lasers

KW - Optoelectronics

KW - Photonic crystals

KW - Photonic integrated circuits

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VL - 2

SP - 66

EP - 69

JO - Optica

JF - Optica

SN - 2334-2536

IS - 1

ER -

Near thresholdless laser operation at room temperature

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Keywords

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