Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

Asif Islam Khan*, Korok Chatterjee, Juan Pablo Duarte, Zhongyuan Lu, Angada Sachid, Sourabh Khandelwal, Ramamoorthy Ramesh, Chenming Hu, Sayeef Salahuddin

*Corresponding author for this work

Research output: Contribution to journalArticle

117 Citations (Scopus)

Abstract

We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation.

Original languageEnglish
Article number7331265
Pages (from-to)111-114
Number of pages4
JournalIEEE Electron Device Letters
Volume37
Issue number1
DOIs
Publication statusPublished - 1 Jan 2016
Externally publishedYes

Keywords

  • ferroelectric
  • NC-FinFET
  • Negative capacitance
  • sub-60 mV/decade

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