Abstract
We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation.
Original language | English |
---|---|
Article number | 7331265 |
Pages (from-to) | 111-114 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 37 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2016 |
Externally published | Yes |
Keywords
- ferroelectric
- NC-FinFET
- Negative capacitance
- sub-60 mV/decade