Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

Asif Islam Khan; Korok Chatterjee; Juan Pablo Duarte; Zhongyuan Lu; Angada Sachid; Sourabh Khandelwal; Ramamoorthy Ramesh; Chenming Hu; Sayeef Salahuddin

doi:10.1109/LED.2015.2501319

Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

Asif Islam Khan^*, Korok Chatterjee, Juan Pablo Duarte, Zhongyuan Lu, Angada Sachid, Sourabh Khandelwal, Ramamoorthy Ramesh, Chenming Hu, Sayeef Salahuddin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

218 Citations (Scopus)

Abstract

We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length L_g=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO₃) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation.

Original language	English
Article number	7331265
Pages (from-to)	111-114
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	1
DOIs	https://doi.org/10.1109/LED.2015.2501319
Publication status	Published - 1 Jan 2016
Externally published	Yes

Keywords

ferroelectric
NC-FinFET
Negative capacitance
sub-60 mV/decade

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10.1109/LED.2015.2501319

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title = "Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor",

abstract = "We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation.",

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AU - Khan, Asif Islam

AU - Chatterjee, Korok

AU - Duarte, Juan Pablo

AU - Lu, Zhongyuan

AU - Sachid, Angada

AU - Khandelwal, Sourabh

AU - Ramesh, Ramamoorthy

AU - Hu, Chenming

AU - Salahuddin, Sayeef

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation.

AB - We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg=100 nm. NC-FinFETs are constructed by connecting a high-quality epitaxial bismuth ferrite (BiFeO3) ferroelectric capacitor to the gate terminal of both n-type and p-type FinFETs. We show that a self-consistent simulation scheme based on Berkeley SPICE Insulated-Gate-FET Model:Common Multi Gate model and Landau-Devonshire formalism could quantitatively match the experimental NC-FinFET transfer characteristics. This also allows a general procedure to extract the effective S-shaped ferroelectric charge-voltage characteristics that provides important insights into the device operation.

KW - ferroelectric

KW - NC-FinFET

KW - Negative capacitance

KW - sub-60 mV/decade

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JF - IEEE Electron Device Letters

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ER -

Negative Capacitance in Short-Channel FinFETs Externally Connected to an Epitaxial Ferroelectric Capacitor

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Keywords

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