Abstract
Sapphire films with various dopant concentrations of both neodymium and ytterbium ions were grown by the pulsed laser deposition method. Reflection high energy electron diffraction and X-ray diffraction measurements as well as the emission spectra indicate epitaxial growth of the films.
| Original language | English |
|---|---|
| Title of host publication | Advances in Optical Materials, AIOM 2012 |
| Pages | IF2A.5.pdf 1-IF2A.5.pdf 3 |
| Number of pages | 3 |
| Publication status | Published - 2012 |
| Event | Advances in Optical Materials, AIOM 2012 - San Diego, CA, United States Duration: 1 Feb 2012 → 3 Feb 2012 |
Other
| Other | Advances in Optical Materials, AIOM 2012 |
|---|---|
| Country/Territory | United States |
| City | San Diego, CA |
| Period | 1/02/12 → 3/02/12 |
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