Neutron transmutation doping of gallium arsenide

D. Alexiev*, K. S. A. Butcher

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms cm3/n cm2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated.

Original languageEnglish
Pages (from-to)430-436
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume83
Issue number3
DOIs
Publication statusPublished - Nov 1993

Fingerprint Dive into the research topics of 'Neutron transmutation doping of gallium arsenide'. Together they form a unique fingerprint.

Cite this