Abstract
Neutron transmutation doping (NTD) was studied as a means of compensating p-type liquid phase epitaxial (LPE) gallium arsenide. It is shown that such epitaxial layers can be transmuted into approximately 3 × 1013 cm-3 n-type material, defect free after appropriate thermal annealing.
Original language | English |
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Pages (from-to) | 288-292 |
Number of pages | 5 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 86 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 2 Apr 1994 |