Neutron transmutation doping of liquid phase epitaxial gallium arsenide

D. Alexiev*, K. S. A. Butcher, M. Edmondson, T. L. Tansley

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    3 Citations (Scopus)


    Neutron transmutation doping (NTD) was studied as a means of compensating p-type liquid phase epitaxial (LPE) gallium arsenide. It is shown that such epitaxial layers can be transmuted into approximately 3 × 1013 cm-3 n-type material, defect free after appropriate thermal annealing.

    Original languageEnglish
    Pages (from-to)288-292
    Number of pages5
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Issue number3-4
    Publication statusPublished - 2 Apr 1994


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