Neutron transmutation doping of liquid phase epitaxial gallium arsenide

D. Alexiev*, K. S. A. Butcher, M. Edmondson, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Neutron transmutation doping (NTD) was studied as a means of compensating p-type liquid phase epitaxial (LPE) gallium arsenide. It is shown that such epitaxial layers can be transmuted into approximately 3 × 1013 cm-3 n-type material, defect free after appropriate thermal annealing.

Original languageEnglish
Pages (from-to)288-292
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume86
Issue number3-4
DOIs
Publication statusPublished - 2 Apr 1994

Fingerprint Dive into the research topics of 'Neutron transmutation doping of liquid phase epitaxial gallium arsenide'. Together they form a unique fingerprint.

Cite this