Neutron transmutation doping (NTD) was studied as a means of compensating p-type liquid phase epitaxial (LPE) gallium arsenide. It is shown that such epitaxial layers can be transmuted into approximately 3 × 1013 cm-3 n-type material, defect free after appropriate thermal annealing.
|Number of pages||5|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 2 Apr 1994|