Neutron transmutation doping of silicon for the production of radiation detectors

D. Alexiev*, K. S. A. Butcher, T. L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

P-type silicon was doped by neutron transmutation (NTD-Si) to produce high-resistivity n-type silicon suitable for the production of surface barrier radiation detectors. Deep level transient spectroscopy (DLTS) analysis showed no remnant traps following annealing (850°C) of the NTD-Si in the presence of a phosphosilicate glass getter. Surface barrier radiation detectors constructed from this material showed no significant charge trapping and compare faavourably with those constructed of float-zone (FZ)Si.

Original languageEnglish
Pages (from-to)510-516
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume69
Issue number4
DOIs
Publication statusPublished - 1 Jul 1992

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