P-type silicon was doped by neutron transmutation (NTD-Si) to produce high-resistivity n-type silicon suitable for the production of surface barrier radiation detectors. Deep level transient spectroscopy (DLTS) analysis showed no remnant traps following annealing (850°C) of the NTD-Si in the presence of a phosphosilicate glass getter. Surface barrier radiation detectors constructed from this material showed no significant charge trapping and compare faavourably with those constructed of float-zone (FZ)Si.
|Number of pages||7|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||Published - 1 Jul 1992|