New high-pressure phase of GaAsO4: Implications for shape-memory materials

S. M. Clark*, A. G. Christy, R. Jones, J. Chen, J. M. Thomas, G. N. Greaves

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The effect of pressure on the crystal structure of GaAsO4 has been studied using energy-dispersive powder diffraction up to 19.7 GPa. A structural phase transition was observed between 6.3 and 9.5 GPa from the ambient hexagonal structure to a triclinic structure. A model for this new high-pressure phase is presented. The low- and high-pressure phases were found to have bulk moduli of 17.6 and 177.0 GPa, respectively. The phase transition is reversible and first order with a volume discontinuity of 8%. The implications for the related shape-memory materials are discussed.

Original languageEnglish
Pages (from-to)38-44
Number of pages7
JournalPhysical Review B
Issue number1
Publication statusPublished - 1995
Externally publishedYes


Dive into the research topics of 'New high-pressure phase of GaAsO4: Implications for shape-memory materials'. Together they form a unique fingerprint.

Cite this