New high-pressure phase of GaAsO4: Implications for shape-memory materials

S. M. Clark; A. G. Christy; R. Jones; J. Chen; J. M. Thomas; G. N. Greaves

doi:10.1103/PhysRevB.51.38

New high-pressure phase of GaAsO4: Implications for shape-memory materials

S. M. Clark^*, A. G. Christy, R. Jones, J. Chen, J. M. Thomas, G. N. Greaves

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The effect of pressure on the crystal structure of GaAsO4 has been studied using energy-dispersive powder diffraction up to 19.7 GPa. A structural phase transition was observed between 6.3 and 9.5 GPa from the ambient hexagonal structure to a triclinic structure. A model for this new high-pressure phase is presented. The low- and high-pressure phases were found to have bulk moduli of 17.6 and 177.0 GPa, respectively. The phase transition is reversible and first order with a volume discontinuity of 8%. The implications for the related shape-memory materials are discussed.

Original language	English
Pages (from-to)	38-44
Number of pages	7
Journal	Physical Review B
Volume	51
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevB.51.38
Publication status	Published - 1995
Externally published	Yes

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10.1103/PhysRevB.51.38

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title = "New high-pressure phase of GaAsO4: Implications for shape-memory materials",

abstract = "The effect of pressure on the crystal structure of GaAsO4 has been studied using energy-dispersive powder diffraction up to 19.7 GPa. A structural phase transition was observed between 6.3 and 9.5 GPa from the ambient hexagonal structure to a triclinic structure. A model for this new high-pressure phase is presented. The low- and high-pressure phases were found to have bulk moduli of 17.6 and 177.0 GPa, respectively. The phase transition is reversible and first order with a volume discontinuity of 8\%. The implications for the related shape-memory materials are discussed.",

author = "Clark, \{S. M.\} and Christy, \{A. G.\} and R. Jones and J. Chen and Thomas, \{J. M.\} and Greaves, \{G. N.\}",

year = "1995",

doi = "10.1103/PhysRevB.51.38",

language = "English",

volume = "51",

pages = "38--44",

journal = "Physical Review B",

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T1 - New high-pressure phase of GaAsO4

T2 - Implications for shape-memory materials

AU - Clark, S. M.

AU - Christy, A. G.

AU - Jones, R.

AU - Chen, J.

AU - Thomas, J. M.

AU - Greaves, G. N.

PY - 1995

Y1 - 1995

N2 - The effect of pressure on the crystal structure of GaAsO4 has been studied using energy-dispersive powder diffraction up to 19.7 GPa. A structural phase transition was observed between 6.3 and 9.5 GPa from the ambient hexagonal structure to a triclinic structure. A model for this new high-pressure phase is presented. The low- and high-pressure phases were found to have bulk moduli of 17.6 and 177.0 GPa, respectively. The phase transition is reversible and first order with a volume discontinuity of 8%. The implications for the related shape-memory materials are discussed.

AB - The effect of pressure on the crystal structure of GaAsO4 has been studied using energy-dispersive powder diffraction up to 19.7 GPa. A structural phase transition was observed between 6.3 and 9.5 GPa from the ambient hexagonal structure to a triclinic structure. A model for this new high-pressure phase is presented. The low- and high-pressure phases were found to have bulk moduli of 17.6 and 177.0 GPa, respectively. The phase transition is reversible and first order with a volume discontinuity of 8%. The implications for the related shape-memory materials are discussed.

UR - https://www.scopus.com/pages/publications/0039086470

U2 - 10.1103/PhysRevB.51.38

DO - 10.1103/PhysRevB.51.38

M3 - Article

AN - SCOPUS:0039086470

SN - 0163-1829

VL - 51

SP - 38

EP - 44

JO - Physical Review B

JF - Physical Review B

IS - 1

ER -

New high-pressure phase of GaAsO4: Implications for shape-memory materials

Abstract

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