New industry standard FinFET compact model for future technology nodes

Sourabh Khandelwal, Juan P. Duarte, Aditya Medury, Y. S. Chauhan, Chenming Hu

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

13 Citations (Scopus)


A new production ready compact model for future FinFETs is presented. This single unified model can model FinFETs with realistic fin shapes including rectangle, triangle, circle and any shape in between. New mobility models support Ge p-FinFETs and InGaAs n-FinFETs. A new quantum effects model enables accurate modeling of III-V FinFETs. Special attention is paid to shape agnostic short-channel effect model for aggressive Lg scaling and body bias model for FinFETs on bulk substrates. With its accuracy verified with experimental data and TCAD, this computationally efficient model is an ideal turn-key solution for simulation and design of future heterogeneous circuits.

Original languageEnglish
Title of host publication2015 Symposium on VLSI Technology
Subtitle of host publicationDigest of Technical Papers
Place of PublicationPiscataway, New Jersey
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages2
ISBN (Electronic)9784863485013
Publication statusPublished - 25 Aug 2015
Externally publishedYes
EventSymposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan
Duration: 16 Jun 201518 Jun 2015


OtherSymposium on VLSI Technology, VLSI Technology 2015


  • Compact Models
  • SPICE models


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