New industry standard FinFET compact model for future technology nodes

Sourabh Khandelwal; Juan P. Duarte; Aditya Medury; Y. S. Chauhan; Chenming Hu

doi:10.1109/VLSIT.2015.7223704

New industry standard FinFET compact model for future technology nodes

Sourabh Khandelwal, Juan P. Duarte, Aditya Medury, Y. S. Chauhan, Chenming Hu

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

12 Citations (Scopus)

Abstract

A new production ready compact model for future FinFETs is presented. This single unified model can model FinFETs with realistic fin shapes including rectangle, triangle, circle and any shape in between. New mobility models support Ge p-FinFETs and InGaAs n-FinFETs. A new quantum effects model enables accurate modeling of III-V FinFETs. Special attention is paid to shape agnostic short-channel effect model for aggressive Lg scaling and body bias model for FinFETs on bulk substrates. With its accuracy verified with experimental data and TCAD, this computationally efficient model is an ideal turn-key solution for simulation and design of future heterogeneous circuits.

Original language	English
Title of host publication	2015 Symposium on VLSI Technology
Subtitle of host publication	Digest of Technical Papers
Place of Publication	Piscataway, New Jersey
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	T62-T63
Number of pages	2
ISBN (Electronic)	9784863485013
DOIs	https://doi.org/10.1109/VLSIT.2015.7223704
Publication status	Published - 25 Aug 2015
Externally published	Yes
Event	Symposium on VLSI Technology, VLSI Technology 2015 - Kyoto, Japan Duration: 16 Jun 2015 → 18 Jun 2015

Other

Other	Symposium on VLSI Technology, VLSI Technology 2015
Country/Territory	Japan
City	Kyoto
Period	16/06/15 → 18/06/15

Keywords

BSIM-CMG
Compact Models
SPICE models

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10.1109/VLSIT.2015.7223704

Cite this

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title = "New industry standard FinFET compact model for future technology nodes",

abstract = "A new production ready compact model for future FinFETs is presented. This single unified model can model FinFETs with realistic fin shapes including rectangle, triangle, circle and any shape in between. New mobility models support Ge p-FinFETs and InGaAs n-FinFETs. A new quantum effects model enables accurate modeling of III-V FinFETs. Special attention is paid to shape agnostic short-channel effect model for aggressive Lg scaling and body bias model for FinFETs on bulk substrates. With its accuracy verified with experimental data and TCAD, this computationally efficient model is an ideal turn-key solution for simulation and design of future heterogeneous circuits.",

keywords = "BSIM-CMG, Compact Models, SPICE models",

author = "Sourabh Khandelwal and Duarte, {Juan P.} and Aditya Medury and Chauhan, {Y. S.} and Chenming Hu",

year = "2015",

month = aug,

day = "25",

doi = "10.1109/VLSIT.2015.7223704",

language = "English",

pages = "T62--T63",

booktitle = "2015 Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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}

Khandelwal, S, Duarte, JP, Medury, A, Chauhan, YS & Hu, C 2015, New industry standard FinFET compact model for future technology nodes. in 2015 Symposium on VLSI Technology: Digest of Technical Papers. Institute of Electrical and Electronics Engineers (IEEE), Piscataway, New Jersey, pp. T62-T63, Symposium on VLSI Technology, VLSI Technology 2015, Kyoto, Japan, 16/06/15. https://doi.org/10.1109/VLSIT.2015.7223704

New industry standard FinFET compact model for future technology nodes. / Khandelwal, Sourabh; Duarte, Juan P.; Medury, Aditya et al.

2015 Symposium on VLSI Technology: Digest of Technical Papers. Piscataway, New Jersey : Institute of Electrical and Electronics Engineers (IEEE), 2015. p. T62-T63.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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T1 - New industry standard FinFET compact model for future technology nodes

AU - Khandelwal, Sourabh

AU - Duarte, Juan P.

AU - Medury, Aditya

AU - Chauhan, Y. S.

AU - Hu, Chenming

PY - 2015/8/25

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AB - A new production ready compact model for future FinFETs is presented. This single unified model can model FinFETs with realistic fin shapes including rectangle, triangle, circle and any shape in between. New mobility models support Ge p-FinFETs and InGaAs n-FinFETs. A new quantum effects model enables accurate modeling of III-V FinFETs. Special attention is paid to shape agnostic short-channel effect model for aggressive Lg scaling and body bias model for FinFETs on bulk substrates. With its accuracy verified with experimental data and TCAD, this computationally efficient model is an ideal turn-key solution for simulation and design of future heterogeneous circuits.

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KW - SPICE models

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BT - 2015 Symposium on VLSI Technology

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T2 - Symposium on VLSI Technology, VLSI Technology 2015

Y2 - 16 June 2015 through 18 June 2015

ER -

New industry standard FinFET compact model for future technology nodes

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