Abstract
A measurement technique for performing detailed characterisation of modern Field Effect Transistors (FET's) is reported. The technique, is based on impulse excitation over arbitrary voltage and time contours, allows determination of parameters and time constants associated with second-orders effects observed in short channel FET's and III-V semiconductors. Large-signal bias independent models that incorporate these additional parameters provide predictions that are consistent with large-signal measurements and conventional s-parameter results.
Original language | English |
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Title of host publication | Proceedings - IEEE International Symposium on Circuits and Systems |
Place of Publication | Piscataway, N.J. |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 1093-1096 |
Number of pages | 4 |
Volume | 2 |
ISBN (Print) | 0780312813 |
DOIs | |
Publication status | Published - May 1993 |
Event | Proceedings of the 1993 IEEE International Symposium on Circuits and Systems - Chicago, IL, USA Duration: 3 May 1993 → 6 May 1993 |
Other
Other | Proceedings of the 1993 IEEE International Symposium on Circuits and Systems |
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City | Chicago, IL, USA |
Period | 3/05/93 → 6/05/93 |