New method for comprehensive characterisation of MES/MOD/MOS FET's

Anthony E. Parker*, Jonathan B. Scott

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    5 Citations (Scopus)

    Abstract

    A measurement technique for performing detailed characterisation of modern Field Effect Transistors (FET's) is reported. The technique, is based on impulse excitation over arbitrary voltage and time contours, allows determination of parameters and time constants associated with second-orders effects observed in short channel FET's and III-V semiconductors. Large-signal bias independent models that incorporate these additional parameters provide predictions that are consistent with large-signal measurements and conventional s-parameter results.

    Original languageEnglish
    Title of host publicationProceedings - IEEE International Symposium on Circuits and Systems
    Place of PublicationPiscataway, N.J.
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages1093-1096
    Number of pages4
    Volume2
    ISBN (Print)0780312813
    DOIs
    Publication statusPublished - May 1993
    EventProceedings of the 1993 IEEE International Symposium on Circuits and Systems - Chicago, IL, USA
    Duration: 3 May 19936 May 1993

    Other

    OtherProceedings of the 1993 IEEE International Symposium on Circuits and Systems
    CityChicago, IL, USA
    Period3/05/936/05/93

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